| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFI634GMOSFET N-CH 250V 5.6A TO220-3 Vishay Siliconix |
8,788 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 5.6A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 770 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRLZ24PBF-BE3MOSFET N-CH 60V 17A TO220AB Vishay Siliconix |
4,720 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | - | 100mOhm @ 10A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRLZ24PBFMOSFET N-CH 60V 17A TO220AB Vishay Siliconix |
2,660 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI3458DV-T1-E3MOSFET N-CH 60V 3.2A 6TSOP Vishay Siliconix |
9,461 | - |
|
数据手册 |
TrenchFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | 100mOhm @ 3.2A, 10V | 1V @ 250µA (Min) | 16 nC @ 10 V | ±20V | - | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
|
SI4470EY-T1-E3MOSFET N-CH 60V 9A 8SO Vishay Siliconix |
4,841 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 6V, 10V | 11mOhm @ 12A, 10V | 2V @ 250µA (Min) | 70 nC @ 10 V | ±20V | - | - | 1.85W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI4480DY-T1-E3MOSFET N-CH 80V 6A 8-SOIC Vishay Siliconix |
9,821 | - |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 6A (Ta) | 6V, 10V | 35mOhm @ 6A, 10V | 2V @ 250µA (Min) | 50 nC @ 10 V | ±20V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI4470EY-T1-GE3MOSFET N-CH 60V 9A 8SO Vishay Siliconix |
8,585 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta) | 6V, 10V | 11mOhm @ 12A, 10V | 2V @ 250µA (Min) | 70 nC @ 10 V | ±20V | - | - | 1.85W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRL540LMOSFET N-CH 100V 28A TO262-3 Vishay Siliconix |
4,066 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | - | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | - | - | - | - | Through Hole | TO-262-3 |
|
SI4418DY-T1-E3MOSFET N-CH 200V 2.3A 8SO Vishay Siliconix |
7,470 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.3A (Ta) | 6V, 10V | 130mOhm @ 3A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRFR1N60ATRLPBFMOSFET N-CH 600V 1.4A DPAK Vishay Siliconix |
7,914 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |

