| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF830STRLMOSFET N-CH 500V 4.5A D2PAK Vishay Siliconix |
2,539 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFP450NPBFMOSFET N-CH 500V 14A TO247-3 Vishay Siliconix |
5,530 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 370mOhm @ 8.4A, 10V | 5V @ 250µA | 77 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
SQR40030ER_GE3MOSFET N-CH 40V TO252 REVERSE Vishay Siliconix |
6,319 | - |
|
数据手册 |
- | TO-252-4, DPAK (3 Leads + Tab) | Tape & Reel (TR) | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-252 (DPAK) Reverse Lead |
|
IRLBA3803MOSFET N-CH 30V 179A SUPER-220 Vishay Siliconix |
4,978 | - |
|
数据手册 |
- | Super-220™ | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 179A (Tc) | 4.5V, 10V | 5mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
|
IRFB16N60LPBFMOSFET N-CH 600V 16A TO220AB Vishay Siliconix |
3,935 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 460mOhm @ 9A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 2720 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI4190DY-T1-GE3MOSFET N-CH 100V 20A 8-SOIC Vishay Siliconix |
7,385 | - |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | - | 8.8mOhm @ 15A, 10V | 2.8V @ 250µA | 58 nC @ 10 V | - | 2000 pF @ 50 V | - | - | - | - | - | Surface Mount | 8-SOIC |
|
SIHB12N50C-E3MOSFET N-CH 500V 12A D2PAK Vishay Siliconix |
7,542 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 12A (Tc) | 10V | 555mOhm @ 4A, 10V | 5V @ 250µA | 48 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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IRFBE20MOSFET N-CH 800V 1.8A TO220AB Vishay Siliconix |
6,570 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFBF20SMOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix |
5,930 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFI9620GMOSFET P-CH 200V 3A TO220-3 Vishay Siliconix |
7,941 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 3A (Tc) | 10V | 1.5Ohm @ 1.8A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 15 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |

