电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHA18N60E-GE3N-CHANNEL 600V Vishay Siliconix |
972 | - |
|
数据手册 |
E | TO-220-3 Full Pack | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIHA25N50E-E3MOSFET N-CH 500V 26A TO220 Vishay Siliconix |
800 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SIHP25N50E-BE3N-CHANNEL 500V Vishay Siliconix |
2,988 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SIHP25N50E-GE3MOSFET N-CH 500V 26A TO220AB Vishay Siliconix |
558 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
SUP90142E-GE3MOSFET N-CH 200V 90A TO220AB Vishay Siliconix |
296 | - |
|
数据手册 |
ThunderFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 7.5V, 10V | 15.2mOhm @ 30A, 10V | 4V @ 250µA | 87 nC @ 10 V | ±20V | 31200 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SUP70030E-GE3MOSFET N-CH 100V 150A TO220AB Vishay Siliconix |
384 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 3.18mOhm @ 30A, 10V | 4V @ 250µA | 214 nC @ 10 V | ±20V | 10870 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SQW33N65EF-GE3E SERIES POWER MOSFET WITH FAST Vishay Siliconix |
480 | - |
|
数据手册 |
E | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 173 nC @ 10 V | ±30V | 3972 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247AD |
|
SUM40014M-GE3MOSFET N-CH 40V 200A TO263-7 Vishay Siliconix |
4,915 | - |
|
数据手册 |
- | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | - | 0.99mOhm @ 20A, 10V | 2.4V @ 250µA | 275 nC @ 10 V | ±20V | 15780 pF @ 20 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
|
SIHG186N60EF-GE3MOSFET N-CH 600V 8.4A TO247AC Vishay Siliconix |
207 | - |
|
数据手册 |
EF | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32 nC @ 10 V | ±30V | 1081 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFS9N60APBFMOSFET N-CH 600V 9.2A D2PAK Vishay Siliconix |
188 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
