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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQM110N05-06L_GE3MOSFET N-CH 55V 110A TO263 Vishay Siliconix |
1,115 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFI9Z34GPBFMOSFET P-CH 60V 12A TO220-3 Vishay Siliconix |
254 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 140mOhm @ 7.2A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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SQJQ144AER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
328 | - |
|
数据手册 |
TrenchFET® Gen IV | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 575A (Tc) | 10V | 0.9mOhm @ 20A, 10V | 3.5V @ 250µA | 145 nC @ 10 V | ±20V | 9020 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 |
|
SUP10250E-GE3MOSFET N-CH 250V 63A TO220AB Vishay Siliconix |
130 | - |
|
数据手册 |
ThunderFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88 nC @ 10 V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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SQJQ186ER-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
1,890 | - |
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数据手册 |
TrenchFET® Gen IV | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 329A (Tc) | 10V | 2.3mOhm @ 20A, 10V | 3.5V @ 250µA | 185 nC @ 10 V | ±20V | 10552 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 |
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SQD50P04-13L_GE3MOSFET P-CH 40V 50A TO252 Vishay Siliconix |
1,866 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 13mOhm @ 17A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | ±20V | 3590 pF @ 20 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SI7148DP-T1-GE3MOSFET N-CH 75V 28A PPAK SO-8 Vishay Siliconix |
5,261 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 28A (Tc) | 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 2900 pF @ 35 V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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IRFI840GLCPBFMOSFET N-CH 500V 4.5A TO220-3 Vishay Siliconix |
102 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 850mOhm @ 2.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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SQJQ480E-T1_GE3MOSFET N-CH 80V 150A PPAK 8 X 8 Vishay Siliconix |
5,416 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 8 x 8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 10V | 3mOhm @ 20A, 10V | 3.5V @ 250µA | 144 nC @ 10 V | ±20V | 8625 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 |
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SIDR104AEP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix |
8,048 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21.1A (Ta), 90.5A (Tc) | 7.5V, 10V | 6.1mOhm @ 15A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 3250 pF @ 50 V | - | 6.5W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8DC |
