| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR406DP-T1-GE3MOSFET N-CH 25V 40A PPAK SO-8 Vishay Siliconix |
9,365 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 3.8mOhm @ 15A, 10V | 2.4V @ 250µA | 50 nC @ 10 V | ±20V | 2083 pF @ 10 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR432DP-T1-GE3MOSFET N-CH 100V 28.4A PPAK SO-8 Vishay Siliconix |
7,796 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.4A (Tc) | 7.5V, 10V | 30.6mOhm @ 8.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1170 pF @ 50 V | - | 5W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR436DP-T1-GE3MOSFET N-CH 25V 40A PPAK SO-8 Vishay Siliconix |
8,889 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 3V @ 250µA | 47 nC @ 10 V | ±20V | 1715 pF @ 15 V | - | 5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR494DP-T1-GE3MOSFET N-CH 12V 60A PPAK SO-8 Vishay Siliconix |
3,054 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 12 V | 60A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.5V @ 250µA | 150 nC @ 10 V | ±20V | 6900 pF @ 6 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIR874DP-T1-GE3MOSFET N-CH 25V 20A PPAK SO-8 Vishay Siliconix |
2,605 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Tc) | 4.5V, 10V | 9.4mOhm @ 10A, 10V | 2.2V @ 250µA | 27 nC @ 10 V | ±20V | 985 pF @ 15 V | - | 3.9W (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SQ2319ES-T1-GE3MOSFET P-CH 40V 4.6A TO-236 Vishay Siliconix |
9,864 | - |
|
数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 4.6A (Tc) | - | 75mOhm @ 3A, 10V | 2.5V @ 250µA | 16 nC @ 10 V | - | 620 pF @ 25 V | - | - | - | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
SQ7002K-T1-GE3MOSFET N-CH 60V 320MA SOT23-3 Vishay Siliconix |
7,504 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 320mA (Tc) | 4.5V, 10V | 1.3Ohm @ 500mA, 10V | 2.5V @ 250µA | 1.4 nC @ 4.5 V | ±20V | 24 pF @ 30 V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
SQD40N06-25L-GE3MOSFET N-CH 60V 30A TO252 Vishay Siliconix |
5,928 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SQD45N05-20L-GE3MOSFET N-CH 50V 50A TO252 Vishay Siliconix |
5,131 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 250µA | 43 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 2.5W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SQD50N04-09H-GE3MOSFET N-CH 40V 50A TO252 Vishay Siliconix |
5,869 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | - | 9mOhm @ 20A, 10V | 5V @ 250µA | 76 nC @ 10 V | - | 4240 pF @ 25 V | - | - | - | - | - | Surface Mount | TO-252AA |

