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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR224TRRMOSFET N-CH 250V 3.8A DPAK Vishay Siliconix |
3,505 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR9014NTRMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
6,931 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR9014NTRRMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
6,141 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR9014TRRMOSFET P-CH 60V 5.1A DPAK Vishay Siliconix |
7,911 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR9210TRRMOSFET P-CH 200V 1.9A DPAK Vishay Siliconix |
5,937 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR9214TRRMOSFET P-CH 250V 2.7A DPAK Vishay Siliconix |
2,285 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFSL31N20DTRLMOSFET N-CH 200V 31A I2PAK Vishay Siliconix |
7,611 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±30V | 2370 pF @ 25 V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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IRFSL31N20DTRRMOSFET N-CH 200V 31A I2PAK Vishay Siliconix |
5,204 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 110 nC @ 10 V | ±30V | 2370 pF @ 25 V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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IRFSL9N60ATRRMOSFET N-CH 600V 9.2A I2PAK Vishay Siliconix |
9,186 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
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IRFZ14LMOSFET N-CH 60V 10A TO262-3 Vishay Siliconix |
4,320 | - |
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数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | 10V | 200mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262-3 |
