| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFP450LCMOSFET N-CH 500V 14A TO247-3 Vishay Siliconix |
7,572 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 2200 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFP460LCMOSFET N-CH 500V 20A TO247-3 Vishay Siliconix |
4,966 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRF730ALMOSFET N-CH 400V 5.5A I2PAK Vishay Siliconix |
3,398 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRFI9634GMOSFET P-CH 250V 4.1A TO220-3 Vishay Siliconix |
5,967 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 4.1A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
IRF520STRRMOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix |
6,925 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF530LMOSFET N-CH 100V 14A TO262 Vishay Siliconix |
2,346 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF540LMOSFET N-CH 100V 28A TO262 Vishay Siliconix |
4,954 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF614LMOSFET N-CH 250V 2.7A TO262 Vishay Siliconix |
7,731 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF624LMOSFET N-CH 250V 4.4A I2PAK Vishay Siliconix |
5,797 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
IRF630LMOSFET N-CH 200V 9A I2PAK Vishay Siliconix |
3,792 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |

