电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP460AMOSFET N-CH 500V 20A TO247-3 Vishay Siliconix |
9,522 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 105 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFPC40MOSFET N-CH 600V 6.8A TO247-3 Vishay Siliconix |
3,673 | - |
|
数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
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IRFPC60MOSFET N-CH 600V 16A TO247-3 Vishay Siliconix |
3,800 | - |
|
数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFZ30MOSFET N-CH 50V 30A TO220AB Vishay Siliconix |
6,597 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 30A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ34MOSFET N-CH 60V 30A TO220AB Vishay Siliconix |
5,462 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFZ40MOSFET N-CH 60V 50A TO220AB Vishay Siliconix |
5,518 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL620MOSFET N-CH 200V 5.2A TO220AB Vishay Siliconix |
2,536 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 4V, 5V | 800mOhm @ 3.1A, 5V | 2V @ 250µA | 16 nC @ 5 V | ±10V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL630MOSFET N-CH 200V 9A TO220AB Vishay Siliconix |
7,597 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 4V, 5V | 400mOhm @ 5.4A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL640MOSFET N-CH 200V 17A TO220AB Vishay Siliconix |
4,376 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 17A (Tc) | 4V, 5V | 180mOhm @ 10A, 5V | 2V @ 250µA | 66 nC @ 5 V | ±10V | 1800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRLI520GMOSFET N-CH 100V 7.2A TO220-3 Vishay Siliconix |
5,089 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Tc) | 4V, 5V | 270mOhm @ 4.3A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
