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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP6N40D-BE3N-CHANNEL 400V Vishay Siliconix |
975 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF730BPBFMOSFET N-CH 400V 6A TO220AB Vishay Siliconix |
944 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SUD19P06-60-BE3MOSFET P-CH 60V 18.3A DPAK Vishay Siliconix |
5,729 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18.3A (Tc) | 4.5V, 10V | 60mOhm @ 10A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 2.3W (Ta), 38.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SQJA82EP-T1_BE3N-CHANNEL 80-V (D-S) 175C MOSFET Vishay Siliconix |
3,000 | - |
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数据手册 |
- | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 60A (Tc) | 4.5V, 10V | 8.2mOhm @ 10A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQJA04EP-T1_BE3N-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix |
3,000 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 6.2mOhm @ 10A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 |
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SQJA84EP-T1_BE3N-CHANNEL 80-V (D-S) 175C MOSFET Vishay Siliconix |
2,995 | - |
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数据手册 |
- | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 46A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
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SIR4608LDP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
5,993 | - |
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数据手册 |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.3A (Ta), 43.4A (Tc) | 4.5V, 10V | 11.5mOhm @ 10A, 10V | 3V @ 250µA | 23 nC @ 10 V | ±20V | 905 pF @ 30 V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SQM60030E_GE3MOSFET N-CH 80V 120A D2PAK Vishay Siliconix |
800 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.2mOhm @ 30A, 10V | 3.5V @ 250µA | 165 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263 (D2PAK) |
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SI3430DV-T1-BE3MOSFET N-CH 100V 1.8A 6TSOP Vishay Siliconix |
4,854 | - |
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数据手册 |
- | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.8A (Ta) | 6V, 10V | 170mOhm @ 2.4A, 10V | 4.2V @ 250µA | 8.2 nC @ 10 V | ±20V | - | - | 1.14W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-TSOP |
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IRLR024TRPBFMOSFET N-CH 60V 14A DPAK Vishay Siliconix |
2,495 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
