上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM80N1R2CI C0GMOSFET N-CH 800V 5.5A ITO220AB Taiwan Semiconductor Corporation |
7,360 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
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TSM80N950CI C0GMOSFET N-CH 800V 6A ITO220AB Taiwan Semiconductor Corporation |
2,369 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
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TSM035NB04LCZ40V, 157A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
9,964 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 18A (Ta), 157A (Tc) | 4.5V, 10V | 3.5mOhm @ 18A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 6350 pF @ 20 V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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TSM60NB600CP600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,384 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 516 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM60NB600CH600V, 7A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
6,031 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 516 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM60N380CH C5GMOSFET N-CH 600V 11A TO251 Taiwan Semiconductor Corporation |
3,773 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5 nC @ 10 V | ±30V | 1040 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM80N1R2CL C0GMOSFET N-CH 800V 5.5A TO262S Taiwan Semiconductor Corporation |
2,613 | - |
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数据手册 |
- | TO-262-3 Short Leads, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262S (I2PAK) |
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TSM70N10CP ROGMOSFET N-CHANNEL 100V 70A TO252 Taiwan Semiconductor Corporation |
7,867 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 13mOhm @ 30A, 10V | 4V @ 250µA | 145 nC @ 10 V | ±20V | 4300 pF @ 30 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM043NB04LCZ40V, 124A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
7,567 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 16A (Ta), 124A (Tc) | 4.5V, 10V | 4.3mOhm @ 16A, 10V | 2.5V @ 250µA | 76 nC @ 10 V | ±20V | 4387 pF @ 20 V | - | 2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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TSM10N80CZ C0GMOSFET N-CH 800V 9.5A TO220 Taiwan Semiconductor Corporation |
3,878 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.5A (Tc) | 10V | 1.05Ohm @ 4.75A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 2336 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
