上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM060NB06CZ60V, 111A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
6,628 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 111A (Tc) | 7V, 10V | 6mOhm @ 13A, 10V | 4V @ 250µA | 103 nC @ 10 V | ±20V | 6842 pF @ 30 V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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TSM060NB06LCZ60V, 111A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
6,680 | - |
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数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 111A (Tc) | 4.5V, 10V | 6mOhm @ 13A, 10V | 2.5V @ 250µA | 107 nC @ 10 V | ±20V | 6273 pF @ 30 V | - | 2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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TSM60NB260CI C0GMOSFET N-CH 600V 13A ITO220AB Taiwan Semiconductor Corporation |
8,014 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
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TSM60N600CP ROGMOSFET N-CHANNEL 600V 8A TO252 Taiwan Semiconductor Corporation |
4,474 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM35N10CP ROGMOSFET N-CHANNEL 100V 32A TO252 Taiwan Semiconductor Corporation |
5,677 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 4.5V, 10V | 37mOhm @ 10A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±20V | 1598 pF @ 30 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM3N80CP ROGMOSFET N-CHANNEL 800V 3A TO252 Taiwan Semiconductor Corporation |
7,088 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 696 pF @ 25 V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM089N08LCR80V, 67A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
3,470 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Ta), 67A (Tc) | 4.5V, 10V | 8.9mOhm @ 12A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | ±20V | 6119 pF @ 40 V | - | 2.6W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TSM10ND60CI600V, 10A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
9,234 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 600mOhm @ 3A, 10V | 3.8V @ 250µA | 38 nC @ 10 V | ±30V | 1928 pF @ 50 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM10ND65CI650V, 10A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
7,916 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 800mOhm @ 3A, 10V | 3.8V @ 250µA | 39.6 nC @ 10 V | ±30V | 1863 pF @ 50 V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM70N750CH700V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
5,593 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7 nC @ 10 V | ±30V | 555 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
