| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM22P10CZ C0GMOSFET P-CH 100V 22A TO220 Taiwan Semiconductor Corporation |
8,050 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±25V | 2250 pF @ 30 V | - | 125W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TSM230N06CI C0GMOSFET N-CH 60V 50A ITO220 Taiwan Semiconductor Corporation |
6,455 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 42W (Tc) | 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
TSM480P06CI C0GMOSFET P-CH 60V 20A ITO220 Taiwan Semiconductor Corporation |
6,126 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4 nC @ 10 V | ±20V | 1250 pF @ 30 V | - | 27W (Tc) | -50°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
TSM480P06CZ C0GMOSFET P-CH 60V 20A TO220 Taiwan Semiconductor Corporation |
9,265 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4 nC @ 10 V | ±20V | 1250 pF @ 30 V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TSM680P06CI C0GMOSFET P-CH 60V 18A ITO220 Taiwan Semiconductor Corporation |
9,949 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4 nC @ 10 V | ±20V | 870 pF @ 30 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
TSM680P06CZ C0GMOSFET P-CH 60V 18A TO220 Taiwan Semiconductor Corporation |
3,949 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 68mOhm @ 6A, 10V | 2.2V @ 250µA | 16.4 nC @ 10 V | ±20V | 870 pF @ 30 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |

