上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM1NB60SCT A3GMOSFET N-CH 600V 500MA TO92 Taiwan Semiconductor Corporation |
2,091 | - |
|
数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1 nC @ 10 V | ±30V | 138 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 |
.JPG)
|
TSM1NB60SCT B0GMOSFET N-CH 600V 500MA TO92 Taiwan Semiconductor Corporation |
8,505 | - |
|
数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1 nC @ 10 V | ±30V | 138 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 |
.jpg)
|
TSM3N100CP ROGMOSFET N-CH 1000V 2.5A TO252 Taiwan Semiconductor Corporation |
2,252 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2.5A (Tc) | 10V | 6Ohm @ 1.25A, 10V | 5.5V @ 250µA | 19 nC @ 10 V | ±30V | 664 pF @ 25 V | - | 99W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
TSM1NB60SCT A3MOSFET N-CH 600V 500MA TO92 Taiwan Semiconductor Corporation |
2,967 | - |
|
数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Tape & Box (TB) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1 nC @ 10 V | ±30V | 138 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 |
|
TSM4425CS RLGMOSFET P-CH 30V 11A 8SOP Taiwan Semiconductor Corporation |
3,623 | - |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Tc) | 4.5V, 10V | 12mOhm @ 11A, 10V | 3V @ 250µA | 64 nC @ 10 V | ±20V | 3680 pF @ 8 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
TSM1NB60SCT B0MOSFET N-CH 600V 500MA TO92 Taiwan Semiconductor Corporation |
7,217 | - |
|
数据手册 |
- | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1 nC @ 10 V | ±30V | 138 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92 |
|
|
TSM8N70CI C0MOSFET N-CH 700V 8A ITO220AB Taiwan Semiconductor Corporation |
7,214 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 2006 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | ITO-220AB |
|
|
TSM2311CX-01 RFGMOSFET P-CH 20V 4A SOT23 Taiwan Semiconductor Corporation |
5,732 | - |
|
数据手册 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | 1.4V @ 250µA | 9 nC @ 4.5 V | ±8V | 640 pF @ 6 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
TSM10N60CZ C0GMOSFET N-CH 600V 10A TO220 Taiwan Semiconductor Corporation |
8,092 | - |
|
数据手册 |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | 4V @ 250µA | 45.8 nC @ 10 V | ±30V | 1738 pF @ 25 V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
TSM22P10CI C0GMOSFET P-CH 100V 22A ITO220 Taiwan Semiconductor Corporation |
5,265 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | 3V @ 250µA | 42 nC @ 10 V | ±25V | 2250 pF @ 30 V | - | 48W (Tc) | 150°C (TJ) | - | - | Through Hole | ITO-220 |
