上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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TSM60NB600CP ROGMOSFET N-CHANNEL 600V 7A TO252 Taiwan Semiconductor Corporation |
8,080 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 516 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM70N750CP ROGMOSFET N-CHANNEL 700V 6A TO252 Taiwan Semiconductor Corporation |
1,985 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7 nC @ 10 V | ±30V | 555 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM70N600CI700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
7,564 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM70N600ACL700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
9,502 | - |
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数据手册 |
- | TO-262-3 Short Leads, I2PAK | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262S (I2PAK SL) |
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TSM16ND50CI500V, 16A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
3,345 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 10V | 350mOhm @ 4A, 10V | 4.5V @ 250µA | 53 nC @ 10 V | ±30V | 2551 pF @ 50 V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM160N10CZ C0GMOSFET N-CH 100V 160A TO220 Taiwan Semiconductor Corporation |
4,646 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 10V | 5.5mOhm @ 30A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 9840 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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TSM650N15CR RLGMOSFET N-CH 150V 24A 8PDFN Taiwan Semiconductor Corporation |
6,088 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 24A (Tc) | 6V, 10V | 65mOhm @ 4A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 1829 pF @ 75 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TSM70N380CP700V, 11A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
5,134 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8 nC @ 10 V | ±30V | 981 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM80N1R2CI800V, 5.5A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
8,143 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 1.8A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM80N950CI800V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,605 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
