上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
.jpg)
|
TSM80N1R2CP ROGMOSFET N-CH 800V 5.5A TO252 Taiwan Semiconductor Corporation |
6,253 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
TSM60NB099CZ C0GMOSFET N-CHANNEL 600V 38A TO220 Taiwan Semiconductor Corporation |
7,073 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 99mOhm @ 11.3A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±30V | 2587 pF @ 100 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TSM60NB190CZ600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
9,432 | - |
|
数据手册 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
TSM80N950CP ROGMOSFET N-CHANNEL 800V 6A TO252 Taiwan Semiconductor Corporation |
2,482 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
TSM60NB260CI600V, 13A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
7,565 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 260mOhm @ 3.9A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 32.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
|
TSM60NC196CI600V, 20A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
4,336 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 39 nC @ 10 V | ±30V | 1535 pF @ 300 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
|
TSM60NB190CM2600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
8,292 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
TSM60NB190CI600V, 18A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
6,884 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
|
|
TSM60N380CP ROGMOSFET N-CHANNEL 600V 11A TO252 Taiwan Semiconductor Corporation |
7,546 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 4V @ 250µA | 20.5 nC @ 10 V | ±30V | 1040 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
,-TO-263AB.jpg)
|
TSM60NB190CM2 RNGMOSFET N-CH 600V 18A TO263 Taiwan Semiconductor Corporation |
8,767 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 150.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
