上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM60NB900CH600V, 4A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
9,171 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6 nC @ 10 V | ±30V | 315 pF @ 100 V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM60NB900CP600V, 4A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,003 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6 nC @ 10 V | ±30V | 315 pF @ 100 V | - | 36.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM088NA03CR RLGMOSFET N-CH 30V 61A 8PDFN Taiwan Semiconductor Corporation |
4,259 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 61A (Tc) | 4.5V, 10V | 8.8mOhm @ 13A, 10V | 2.5V @ 250µA | 12.6 nC @ 10 V | ±20V | 750 pF @ 15 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TSM70NB1R4CP700V, 3A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
5,653 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.4 nC @ 10 V | ±30V | 317 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM500N15CS150V, 11A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
6,353 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta), 11A (Tc) | 10V | 50mOhm @ 4A, 10V | 4V @ 250µA | 20.5 nC @ 10 V | ±20V | 1123 pF @ 80 V | - | 12.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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TSM8N80CZ C0GMOSFET N-CHANNEL 800V 8A TO220 Taiwan Semiconductor Corporation |
3,171 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±30V | 1921 pF @ 25 V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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TSM2N60ECP ROGMOSFET N-CHANNEL 600V 2A TO252 Taiwan Semiconductor Corporation |
7,696 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4Ohm @ 1A, 10V | 5V @ 250µA | 9.5 nC @ 10 V | ±30V | 362 pF @ 25 V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM60N600CH C5GMOSFET N-CHANNEL 600V 8A TO251 Taiwan Semiconductor Corporation |
8,534 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM2N100CH C5GMOSFET N-CH 1000V 1.85A TO251 Taiwan Semiconductor Corporation |
3,322 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.85A (Tc) | 10V | 8.5Ohm @ 900mA, 10V | 5.5V @ 250µA | 17 nC @ 10 V | ±30V | 625 pF @ 25 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM80N1R2CH C5GMOSFET N-CH 800V 5.5A TO251 Taiwan Semiconductor Corporation |
7,440 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
