上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G02P06P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor |
2,412 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Tc) | 4.5V, 10V | 190mOhm @ 1A, 10V | 2.5V @ 250µA | 11.3 nC @ 10 V | ±20V | 566 pF @ 30 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
|
GT1003AN100V, 3A,RD<140M@10V,VTH1.0V~3. Goford Semiconductor |
1,947 | - |
|
数据手册 |
SGT | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 10V | 80mOhm @ 3A, 10V | 2.5V @ 250µA | 5 nC @ 10 V | ±20V | 209 pF @ 50 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
G300N04D3MOSFET N-CH 40V 6A DFN3*3-8L Goford Semiconductor |
4,990 | - |
|
数据手册 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 479 pF @ 20 V | - | 1.25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
|
|
G800N06HN60V, 3A,RD<80M@10V,VTH0.7V~1.2V Goford Semiconductor |
2,325 | - |
|
数据手册 |
TrenchFET® | TO-261-4, TO-261AA | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Tc) | 4.5V, 10V | 80mOhm @ 3A, 10V | 1.2V @ 250µA | 6 nC @ 4.5 V | ±20V | 457 pF @ 30 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
5P40P40V,RD(MAX)<85M@-10V,RD(MAX)<12 Goford Semiconductor |
9,210 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Tc) | 4.5V, 10V | 85mOhm @ 5A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±20V | 600 pF @ 20 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
GT013N04D5N40V,195A,RD<1.7M@10V,VTH2.0V~4. Goford Semiconductor |
5,000 | - |
|
数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3927 pF @ 20 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
|
3400LN30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor |
3,785 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 27mOhm @ 2.8A, 10V | 1.4V @ 250µA | 9.5 nC @ 4.5 V | ±12V | 820 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
G66P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT Goford Semiconductor |
3,000 | - |
|
数据手册 |
TrenchFET® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 16 V | 5.8A (Tc) | 2.5V, 4.5V | 45mOhm @ 4.1A, 4.5V | 1V @ 250µA | 7.8 nC @ 4.5 V | ±12V | 740 pF @ 4 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) |
|
|
G3401LP30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor |
2,103 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.4A (Tc) | 2.5V, 4.5V, 10V | 55mOhm @ 4A, 10V | 1.3V @ 250µA | 9.3 nC @ 4.5 V | ±12V | 652 pF @ 15 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
|
|
03N06LN60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor |
6,330 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Tc) | 4.5V, 10V | 80mOhm @ 2A, 10V | 1.2V @ 250µA | 14.6 nC @ 10 V | ±20V | 458 pF @ 30 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
