上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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G26P04D5MOSFET P-CH 40V 26A DFN5*6-8L Goford Semiconductor |
10,000 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 26A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G500P03IEMOSFET P-CH ESD 30V 4.6A SOT-23 Goford Semiconductor |
3,000 | - |
|
数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Tc) | 2.5V, 4.5V, 10V | 55mOhm @ 4A, 10V | 1.3V @ 250µA | 13 nC @ 10 V | ±12V | 680 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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G08P06D3MOSFET P-CH 60V 8A DFN3*3-8L Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 8A (Tc) | 10V | 52mOhm @ 6A, 10V | 3.5V @ 250µA | - | ±20V | - | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G70P02KMOSFET P-CH 15V 70A TO-252 Goford Semiconductor |
20,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 2.5V, 4.5V | 8.5mOhm @ 20A, 4.5V | 1.5V @ 250µA | - | ±12V | - | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G1002MOSFET N-CH 100V 2A 1.3W SOT-23 Goford Semiconductor |
2,980 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 4.5V, 10V | 250mOhm @ 2A, 10V | 3V @ 250µA | 10 nC @ 10 V | ±20V | 535 pF @ 10 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G3416MOSFET N-CH ESD 20V 6A SOT-23 Goford Semiconductor |
2,920 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.3V @ 250µA | 15 nC @ 10 V | ±12V | 748 pF @ 10 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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G12P10TEMOSFET P-CH ESD 100V 12A 44.6W T Goford Semiconductor |
3,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 12A (Tc) | 10V | 200mOhm @ 6A, 10V | 3V @ 250µA | - | ±20V | - | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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630AMOSFET N-CH 200V 11A TO-252 Goford Semiconductor |
60,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 10V | 280mOhm @ 4.5A, 10V | 3V @ 250µA | - | ±20V | - | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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2301HP30V,RD(MAX)<130M@-4.5V,RD(MAX)< Goford Semiconductor |
2,771 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.8A (Tc) | 4.5V, 10V | 75mOhm @ 3A, 10V | 2.4V @ 250µA | 4.5 nC @ 2.5 V | ±20V | 366 pF @ 15 V | - | 890mW (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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2300FN20V, 6A,RD<27M@4.5V,VTH0.5V~0.9 Goford Semiconductor |
1,129 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 2.5V, 4.5V | 27mOhm @ 2.3A, 4.5V | 900mV @ 250µA | 11.6 nC @ 4.5 V | ±12V | 363 pF @ 10 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
