上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2302MOSFET N-CH 20V 4.3A SOT-23 Goford Semiconductor |
3,197 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Tc) | 2.5V, 4.5V | 27mOhm @ 2.2A, 4.5V | 1.1V @ 250µA | 4 nC @ 4.5 V | ±10V | 356 pF @ 10 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G3035LP30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor |
2,755 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.1A (Ta) | 4.5V, 10V | 59mOhm @ 2.1A, 10V | 2V @ 250µA | 12.5 nC @ 10 V | ±20V | 650 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G300N04LMOSFET N-CH 40V 5A SOT-23-3L Goford Semiconductor |
1,890 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 5A (Tc) | 4.5V, 10V | 35mOhm @ 2A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 517 pF @ 20 V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G3404BN30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
14,935 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A (Tc) | 4.5V, 10V | 22mOhm @ 4.2A, 10V | 2V @ 250µA | 2.5 nC @ 10 V | ±20V | 568 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G29P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4 Goford Semiconductor |
12,694 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 4.1A (Tc) | 2.5V, 4.5V | 30mOhm @ 3A, 4.5V | 900mV @ 250µA | 7.8 nC @ 10 V | ±12V | 740 pF @ 10 V | - | 1.05W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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G2305P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7 Goford Semiconductor |
8,918 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Tc) | 2.5V, 4.5V | 35mOhm @ 4.1A, 4.5V | 1V @ 250µA | 12 nC @ 4.5 V | ±12V | 1050 pF @ 10 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G2304MOSFET N-CH 30V 3.6A SOT-23 Goford Semiconductor |
8,870 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Tc) | 4.5V, 10V | 39mOhm @ 1.8A, 10V | 2.2V @ 250µA | 5 nC @ 10 V | ±20V | 294 pF @ 15 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G06P01EP12V,RD(MAX)<28M@-4.5V,RD(MAX)<4 Goford Semiconductor |
8,792 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Tc) | 1.8V, 4.5V | 28mOhm @ 3A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±10V | 1087 pF @ 6 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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3401MOSFET P-CH 30V 4.2A SOT-23 Goford Semiconductor |
8,625 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A (Tc) | 4.5V, 10V | 55mOhm @ 4A, 10V | 1.3V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 670 pF @ 15 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G3035P30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor |
5,959 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Tc) | 4.5V, 10V | 55mOhm @ 4A, 10V | 2V @ 250µA | 13 nC @ 10 V | ±20V | 607 pF @ 15 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
