上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G01N20LEMOSFET N-CH ESD 200V 1.7A SOT-23 Goford Semiconductor |
57,000 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 1.7A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G1003AMOSFET N-CH ESD 100V 1.7A SOT-23 Goford Semiconductor |
21,000 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 3A (Tc) | 4.5V, 10V | 210mOhm @ 3A, 10V | 3V @ 250µA | - | ±20V | - | - | 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G05P06LMOSFET P-CH 60V 5A SOT-23-3L Goford Semiconductor |
15,000 | - |
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数据手册 |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 5A (Tc) | 4.5V, 10V | 80mOhm @ 4A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 2.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 |
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G2002AMOSFET N-CH 200V 2A SOT-23-6L Goford Semiconductor |
117,000 | - |
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数据手册 |
TrenchFET® | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 2A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | 3V @ 250µA | - | ±20V | - | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L |
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G700P06HMOSFET P-CH 60V 5A SOT-223 Goford Semiconductor |
15,000 | - |
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数据手册 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 5A (Tc) | 4.5V, 10V | 75mOhm @ 6A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G7K2N20HEMOSFET N-CH ESD 200V 2A SOT-223 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 2A (Tc) | 4.5V, 10V | 700mOhm @ 1A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G6P06MOSFET P-CH 60V 6A SOP-8 Goford Semiconductor |
36,000 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 6A (Tc) | 4.5V, 10V | 96mOhm @ 4A, 10V | 3V @ 250µA | - | ±20V | - | - | 4.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G450P04KMOSFET P-CH -40V 11A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 4.5V, 10V | 40mOhm @ 6A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G1007N100V,7A,RD<110M@10V,VTH1.0V~3.0 Goford Semiconductor |
4,000 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7A (Tc) | 4.5V, 10V | 110mOhm @ 1A, 10V | 3V @ 250µA | 11 nC @ 10 V | ±20V | 612 pF @ 50 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-SOP |
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G12P10KEMOSFET P-CH ESD 100V 12A TO-252 Goford Semiconductor |
15,000 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 12A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | 3V @ 250µA | - | ±20V | - | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
