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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCC8104,L1Q(CMMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
5,080 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPCC8105,L1Q(CMMOSFET P-CH 30V 23A 8TSON Toshiba Semiconductor and Storage |
2,514 | - |
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数据手册 |
U-MOSVI | 8-VDFN Exposed Pad | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.3x3.3) |
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TPCC8136.LQMOSFET P-CH 20V 9.4A 8TSON Toshiba Semiconductor and Storage |
3,328 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.4A (Ta) | 1.8V, 4.5V | 16mOhm @ 9.4A, 4.5V | 1.2V @ 1mA | 36 nC @ 5 V | ±12V | 2350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK40J20D,S1F(OMOSFET N-CH 200V 40A TO3P Toshiba Semiconductor and Storage |
7,100 | - |
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数据手册 |
π-MOSVIII | TO-3P-3, SC-65-3 | Tray | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 40A (Ta) | 10V | 44mOhm @ 20A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 100 V | - | 260W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
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TPCC8104,L1QMOSFET P-CH 30V 20A 8TSON Toshiba Semiconductor and Storage |
7,515 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TK12J60W,S1VE(SMOSFET N-CH 600V 11.5A TO3P Toshiba Semiconductor and Storage |
6,276 | - |
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数据手册 |
- | TO-3P-3, SC-65-3 | Tray | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 110W (Tc) | 150°C | - | - | Through Hole | TO-3P(N) |
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TPCA8128,L1QMOSFET P-CH 30V 34A 8SOP Toshiba Semiconductor and Storage |
6,835 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
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TK430A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
6,663 | - |
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数据手册 |
U-MOSIX | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1.75mA | 48 nC @ 10 V | ±30V | 1940 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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TK370A60F,S4X(SMOSFET N-CH Toshiba Semiconductor and Storage |
4,152 | - |
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数据手册 |
U-MOSIX | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 2.04mA | 55 nC @ 10 V | ±30V | 2200 pF @ 300 V | - | 45W (Tc) | 150°C | - | - | Through Hole | TO-220SIS |
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SSM3K15CT,L3FMOSFET N-CH 30V 100MA CST3 Toshiba Semiconductor and Storage |
2,779 | - |
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数据手册 |
- | SC-101, SOT-883 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | 150°C | - | - | Surface Mount | CST3 |
