电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK3670,F(JMOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
8,320 | - |
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数据手册 |
- | TO-226-3, TO-92-3 Long Body | Bulk | Obsolete | - | - | - | 670mA (Tj) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD |
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2SK3670,F(MMOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
6,416 | - |
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数据手册 |
- | TO-226-3, TO-92-3 Long Body | Bulk | Obsolete | - | - | - | 670mA (Tj) | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-92MOD |
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2SJ668(TE16L1,NQ)MOSFET P-CHANNEL 60V 5A PW-MOLD Toshiba Semiconductor and Storage |
9,417 | - |
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数据手册 |
U-MOSIII | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | - | 20W (Tc) | 150°C | - | - | Surface Mount | PW-MOLD |
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SSM3K35MFV,L3FMOSFET N-CH 20V 180MA VESM Toshiba Semiconductor and Storage |
6,818 | - |
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数据手册 |
- | SOT-723 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | ±10V | 9.5 pF @ 3 V | - | 150mW (Ta) | 150°C | - | - | Surface Mount | VESM |
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TPCC8093,L1QMOSFET N-CH 20V 21A 8TSON Toshiba Semiconductor and Storage |
6,672 | - |
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数据手册 |
U-MOSVII | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 21A (Ta) | 2.5V, 4.5V | 5.8mOhm @ 10.5A, 4.5V | 1.2V @ 500µA | 16 nC @ 5 V | ±12V | 1860 pF @ 10 V | - | 1.9W (Ta), 30W (Tc) | 150°C | - | - | Surface Mount | 8-TSON Advance (3.1x3.1) |
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TPCP8J01(TE85L,F,MMOSFET P-CH 32V 5.5A PS-8 Toshiba Semiconductor and Storage |
2,906 | - |
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数据手册 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 32 V | 5.5A (Ta) | 4V, 10V | 35mOhm @ 3A, 10V | 2V @ 1mA | 34 nC @ 10 V | ±20V | 1760 pF @ 10 V | - | 2.14W (Ta) | 150°C (TJ) | - | - | Surface Mount | PS-8 |
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TK12P60W,RVQ(SMOSFET N-CH 600V 11.5A DPAK Toshiba Semiconductor and Storage |
3,909 | - |
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数据手册 |
DTMOSIV | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | 150°C | - | - | Surface Mount | DPAK |
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TK1P90A,LQ(COMOSFET N-CH 900V 1A PW-MOLD Toshiba Semiconductor and Storage |
3,853 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1A (Ta) | 10V | 9Ohm @ 500mA, 10V | 4V @ 1mA | 13 nC @ 10 V | ±30V | 320 pF @ 25 V | - | 20W (Tc) | 150°C | - | - | Surface Mount | PW-MOLD |
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TK2P60D(TE16L1,NV)MOSFET N-CH 600V 2A PW-MOLD Toshiba Semiconductor and Storage |
5,540 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | 150°C | - | - | Surface Mount | PW-MOLD |
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TPCA8109(TE12L1,VMOSFET P-CH 30V 24A 8SOP Toshiba Semiconductor and Storage |
9,629 | - |
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数据手册 |
U-MOSVI | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta) | 4.5V, 10V | 9mOhm @ 12A, 10V | 2V @ 500µA | 56 nC @ 10 V | +20V, -25V | 2400 pF @ 10 V | - | 1.6W (Ta), 30W (Tc) | 150°C | - | - | Surface Mount | 8-SOP Advance (5x5) |
