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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI8402DB-T1-E1MOSFET N-CH 20V 5.3A 2X2 4-MFP Vishay Siliconix |
8,984 | - |
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数据手册 |
- | 4-XFBGA, CSPBGA | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | - | 37mOhm @ 1A, 4.5V | 1V @ 250µA | 26 nC @ 4.5 V | - | - | - | - | - | - | - | Surface Mount | 4-Microfoot |
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SUM110N04-03P-E3MOSFET N-CH 40V 110A TO263 Vishay Siliconix |
8,621 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.1mOhm @ 30A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM110N04-04-E3MOSFET N-CH 40V 110A TO263 Vishay Siliconix |
6,153 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 10V | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 3.75W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM110N04-2M3L-E3MOSFET N-CH 40V 110A TO263 Vishay Siliconix |
2,902 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.3mOhm @ 30A, 10V | 3V @ 250µA | 360 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUM52N20-39P-E3MOSFET N-CH 200V 52A TO263 Vishay Siliconix |
2,053 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 52A (Tc) | 10V, 15V | 38mOhm @ 20A, 15V | 4.5V @ 250µA | 185 nC @ 15 V | ±25V | 4220 pF @ 25 V | - | 3.12W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SI1067X-T1-GE3MOSFET P-CH 20V 1.06A SC89-6 Vishay Siliconix |
6,211 | - |
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数据手册 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.06A (Ta) | 1.8V, 4.5V | 150mOhm @ 1.06A, 4.5V | 950mV @ 250µA | 9.3 nC @ 5 V | ±8V | 375 pF @ 10 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-89 (SOT-563F) |
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SIA443DJ-T1-GE3MOSFET P-CH 20V 9A PPAK SC70-6 Vishay Siliconix |
2,344 | - |
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数据手册 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 1.8V, 4.5V | 45mOhm @ 4.7A, 4.5V | 1V @ 250µA | 25 nC @ 8 V | ±8V | 750 pF @ 10 V | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 |
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SIA450DJ-T1-GE3MOSFET N-CH 240V 1.52A PPAK Vishay Siliconix |
7,089 | - |
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数据手册 |
TrenchFET® | PowerPAK® SC-70-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 240 V | 1.52A (Tc) | 2.5V, 10V | 2.9Ohm @ 700mA, 10V | 2.4V @ 250µA | 7.04 nC @ 10 V | ±20V | 167 pF @ 120 V | - | 3.3W (Ta), 15W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 |
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SIA810DJ-T1-GE3MOSFET N-CH 20V 4.5A PPAK SC70-6 Vishay Siliconix |
2,412 | - |
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数据手册 |
LITTLE FOOT® | PowerPAK® SC-70-6 Dual | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.5A (Tc) | 1.8V, 4.5V | 53mOhm @ 3.7A, 4.5V | 1V @ 250µA | 11.5 nC @ 8 V | ±8V | 400 pF @ 10 V | Schottky Diode (Isolated) | 1.9W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SC-70-6 Dual |
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SI5475DDC-T1-GE3MOSFET P-CH 12V 6A 1206-8 Vishay Siliconix |
4,796 | - |
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数据手册 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 6A (Tc) | 1.8V, 4.5V | 32mOhm @ 5.4A, 4.5V | 1V @ 250µA | 50 nC @ 8 V | ±8V | 1600 pF @ 6 V | - | 2.3W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 1206-8 ChipFET™ |
