| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI4442DY-T1-GE3MOSFET N-CH 30V 15A 8SO Vishay Siliconix |
8,428 | - |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 2.5V, 10V | 4.5mOhm @ 22A, 10V | 1.5V @ 250µA | 50 nC @ 4.5 V | ±12V | - | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRF614MOSFET N-CH 250V 2.7A TO220AB Vishay Siliconix |
5,548 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFBC30LPBFMOSFET N-CH 600V 3.6A TO262-3 Vishay Siliconix |
5,846 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262-3 |
|
IRFBC30SPBFMOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix |
9,560 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF840LPBFMOSFET N-CH 500V 8A TO263AB Vishay Siliconix |
4,565 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFL110MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix |
3,030 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
IRFL110TRMOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix |
7,458 | - |
|
数据手册 |
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
SI7374DP-T1-E3MOSFET N-CH 30V 24A PPAK SO-8 Vishay Siliconix |
2,630 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIE832DF-T1-E3MOSFET N-CH 40V 50A 10POLARPAK Vishay Siliconix |
4,546 | - |
|
数据手册 |
TrenchFET® | 10-PolarPAK® (S) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 14A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3800 pF @ 20 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (S) |
|
SI7374DP-T1-GE3MOSFET N-CH 30V 24A PPAK SO-8 Vishay Siliconix |
4,841 | - |
|
数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Tc) | 4.5V, 10V | 5.5mOhm @ 23.8A, 10V | 2.8V @ 250µA | 122 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 5W (Ta), 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |

