全球电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF510STRRMOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix |
2,645 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI5401DC-T1-E3MOSFET P-CH 20V 5.2A 1206-8 Vishay Siliconix |
5,235 | - |
|
数据手册 |
TrenchFET® | 8-SMD, Flat Leads | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.2A, 4.5V | 1V @ 250µA | 25 nC @ 4.5 V | ±8V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 1206-8 ChipFET™ |
|
SI5476DU-T1-E3MOSFET N-CH 60V 12A PPAK Vishay Siliconix |
2,690 | - |
|
数据手册 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 34mOhm @ 4.6A, 10V | 3V @ 250µA | 32 nC @ 10 V | ±20V | 1100 pF @ 30 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® ChipFET™ Single |
|
|
SI5480DU-T1-E3MOSFET N-CH 30V 12A PPAK Vishay Siliconix |
3,745 | - |
|
数据手册 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 16mOhm @ 7.2A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® ChipFET™ Single |
|
|
SI5482DU-T1-E3MOSFET N-CH 30V 12A PPAK Vishay Siliconix |
8,655 | - |
|
数据手册 |
TrenchFET® | PowerPAK® ChipFET™ Single | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 15mOhm @ 7.4A, 10V | 2V @ 250µA | 51 nC @ 10 V | ±12V | 1610 pF @ 15 V | - | 3.1W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® ChipFET™ Single |
|
|
IRF840LCSPBFMOSFET N-CH 500V 8A D2PAK Vishay Siliconix |
6,658 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRF1405ZTRLMOSFET N-CH 55V 75A TO220AB Vishay Siliconix |
8,254 | - |
|
数据手册 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRF1405ZTRRMOSFET N-CH 55V 75A TO220AB Vishay Siliconix |
6,929 | - |
|
数据手册 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRF744MOSFET N-CH 450V 8.8A TO220AB Vishay Siliconix |
7,880 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 8.8A (Tc) | 10V | 630mOhm @ 5.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRL3402LMOSFET N-CH 20V 85A TO262-3 Vishay Siliconix |
2,396 | - |
|
数据手册 |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 20 V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA (Min) | 78 nC @ 4.5 V | ±10V | 3300 pF @ 15 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262-3 |
