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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF840BPBFMOSFET N-CH 500V 8.7A TO220AB Vishay Siliconix |
5,057 | - |
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数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 527 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF840HPBFPOWER MOSFET TO220AB, 850 M @ 10 Vishay Siliconix |
1,007 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.3A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1059 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SI7423DN-T1-GE3MOSFET P-CH 30V 7.4A PPAK 1212-8 Vishay Siliconix |
1,953 | - |
|
数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 7.4A (Ta) | 4.5V, 10V | 18mOhm @ 11.7A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SQD100N02-3M5L_GE3MOSFET N-CH 20V 100A TO252AA Vishay Siliconix |
1,450 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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SIHF9Z34STRL-GE3MOSFET P-CHANNEL 60V Vishay Siliconix |
730 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 10V | 140mOhm @ 11A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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IRFR224PBFMOSFET N-CH 250V 3.8A DPAK Vishay Siliconix |
2,142 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFD310PBFMOSFET N-CH 400V 350MA 4DIP Vishay Siliconix |
2,012 | - |
|
数据手册 |
- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 350mA (Ta) | 10V | 3.6Ohm @ 210mA, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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SQD50034E_GE3MOSFET N-CH 60V 100A TO252AA Vishay Siliconix |
3,301 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.9mOhm @ 20A, 10V | 3.5V @ 250µA | 90 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252AA |
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IRLR120PBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
2,197 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SI4427BDY-T1-E3MOSFET P-CH 30V 9.7A 8SO Vishay Siliconix |
1,032 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.7A (Ta) | 2.5V, 10V | 10.5mOhm @ 12.6A, 10V | 1.4V @ 250µA | 70 nC @ 4.5 V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
