| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM025NH04CR RLG40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
4,930 | - |
|
数据手册 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 7V, 10V | 2.5mOhm @ 50A, 10V | 3.6V @ 250µA | 59 nC @ 10 V | ±20V | 3794 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | 8-PDFNU (5x6) |
|
TSM60NB380CP ROGMOSFET N-CH 600V 9.5A TO252 Taiwan Semiconductor Corporation |
212 | - |
|
数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 380mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 795 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
TSM70N600CH C5GMOSFET N-CHANNEL 700V 8A TO251 Taiwan Semiconductor Corporation |
125 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
|
TSM8N80CI C0GMOSFET N-CH 800V 8A ITO220AB Taiwan Semiconductor Corporation |
993 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 1.05Ohm @ 4A, 10V | 4V @ 250µA | 41 nC @ 10 V | ±30V | 1921 pF @ 25 V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
|
TSM7N90CI C0GMOSFET N-CH 900V 7A ITO220AB Taiwan Semiconductor Corporation |
1,964 | - |
|
数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1969 pF @ 25 V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220AB |
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TSM70N380CH C5GMOSFET N-CH 700V 11A TO251 Taiwan Semiconductor Corporation |
691 | - |
|
数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8 nC @ 10 V | ±30V | 981 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM70N380CP ROGMOSFET N-CHANNEL 700V 11A TO252 Taiwan Semiconductor Corporation |
15,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 11A (Tc) | 10V | 380mOhm @ 3.3A, 10V | 4V @ 250µA | 18.8 nC @ 10 V | ±30V | 981 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM60NB190CF C0GMOSFET N-CH 600V 18A ITO220S Taiwan Semiconductor Corporation |
3,476 | - |
|
数据手册 |
- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 3.7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 1311 pF @ 100 V | - | 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220S |
|
TSM60NB190CZ C0GMOSFET N-CHANNEL 600V 18A TO220 Taiwan Semiconductor Corporation |
2,854 | - |
|
数据手册 |
- | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
TSM60NB041PW C1GMOSFET N-CHANNEL 600V 78A TO247 Taiwan Semiconductor Corporation |
2,484 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A (Tc) | 10V | 41mOhm @ 21.7A, 10V | 4V @ 250µA | 139 nC @ 10 V | ±30V | 6120 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |

