上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM60NE069CIT C0G600V, 24A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation |
2,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V, 12V | 60mOhm @ 8A, 12V | 6V @ 3.5mA | 89 nC @ 10 V | ±30V | 3551 pF @ 300 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220TL |
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TSM60NE084CIT C0G600V, 21A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation |
2,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V, 12V | 82mOhm @ 7A, 12V | 6V @ 2.9mA | 69 nC @ 10 V | ±30V | 2930 pF @ 300 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220TL |
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TSG65N190CR RVG650V, 11A, PDFN56, E-MODE GAN TR Taiwan Semiconductor Corporation |
2,999 | - |
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数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TSM60NE069PW C0G600V, 51A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation |
295 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V, 12V | 60mOhm @ 17A, 12V | 6V @ 3.5mA | 86 nC @ 10 V | ±30V | 3566 pF @ 300 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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TSG65N195CE RVG650V, 11A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
3,000 | - |
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数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TSM60NE048PW C0GMOSFET Taiwan Semiconductor Corporation |
300 | - |
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数据手册 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | 10V, 12V | 44mOhm @ 20A, 12V | 6V @ 4.6mA | 114 nC @ 10 V | ±30V | 5023 pF @ 300 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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TSG65N110CE RVG650V, 18A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
3,000 | - |
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数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TSG65N068CE RVG650V, 30A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
2,962 | - |
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数据手册 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TSM9435CS RLGMOSFET P-CHANNEL 30V 5.3A 8SOP Taiwan Semiconductor Corporation |
1,138 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Tc) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±20V | 551.57 pF @ 15 V | - | 5.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
.JPG)
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TSM080N03EPQ56 RLGMOSFET N-CH 30V 55A 8PDFN Taiwan Semiconductor Corporation |
4,057 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 8mOhm @ 16A, 10V | 2.5V @ 250µA | 7.5 nC @ 4.5 V | ±20V | 750 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
