电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM60NE285CH C5GMOSFET Taiwan Semiconductor Corporation |
3,750 | - |
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数据手册 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V, 12V | 274mOhm @ 5A, 12V | 6V @ 1.4mA | 22 nC @ 10 V | ±30V | 884 pF @ 300 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TQM032NH04LCR RLG40V, 81A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
7,932 | - |
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数据手册 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 81A (Tc) | 4.5V, 10V | 3.2mOhm @ 40A, 10V | 2.2V @ 250µA | 75 nC @ 10 V | ±16V | - | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-PDFN (5x6) |
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TQM032NH04CR RLG40V, 81A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
5,000 | - |
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数据手册 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 81A (Tc) | 7V, 10V | 3.2mOhm @ 40A, 10V | 3.6V @ 250µA | 67.5 nC @ 10 V | ±20V | 4344 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) |
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TSM089N08LCR RLGMOSFET N-CH 80V 67A 8PDFN Taiwan Semiconductor Corporation |
8,736 | - |
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数据手册 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 67A (Tc) | 4.5V, 10V | 8.9mOhm @ 12A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | ±20V | 6119 pF @ 40 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
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TQM025NH04CR RLG40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
5,000 | - |
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数据手册 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 7V, 10V | 2.5mOhm @ 50A, 10V | 3.6V @ 250µA | 89 nC @ 10 V | ±20V | 5691 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) |
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TQM025NH04LCR RLG40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
5,000 | - |
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数据手册 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.2V @ 250µA | 95 nC @ 10 V | ±16V | 6228 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | 8-PDFNU (4.9x5.75) |
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TSM60NC196CI C0G600V, 20A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
3,840 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 39 nC @ 10 V | ±30V | 1535 pF @ 300 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM60NE285CIT C0GMOSFET Taiwan Semiconductor Corporation |
2,000 | - |
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数据手册 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V, 12V | 274mOhm @ 3.2A, 12V | 6V @ 1.4mA | 22 nC @ 10 V | ±30V | 894 pF @ 300 V | - | 56W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220TL |
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TSM60NC165CI C0G600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
3,989 | - |
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数据手册 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 44 nC @ 10 V | ±30V | 1857 pF @ 300 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220 |
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TSM60NE285CP ROGMOSFET Taiwan Semiconductor Corporation |
5,000 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V, 12V | 274mOhm @ 5A, 12V | 6V @ 1.4mA | 22 nC @ 10 V | ±30V | 884 pF @ 300 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
