电子元器件供应链解决方案商
上传BOM单
场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN2R0-100SSFJNEXTPOWER 80/100V MOSFETS Nexperia USA Inc. |
1,754 | - |
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数据手册 |
- | SOT-1235 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 267A (Tc) | 7V, 10V | 2.07mOhm @ 25A, 10V | 4V @ 1mA | 242 nC @ 10 V | ±20V | 16140 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK88 (SOT1235) |
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PSMNR90-80ASEJPSMNR90-80ASE/SOT8000A/CCPAK12 Nexperia USA Inc. |
250 | - |
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数据手册 |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 495A (Tc) | 10V | 0.9mOhm @ 25A, 10V | 3.6V @ 1mA | 504 nC @ 10 V | ±20V | 36802 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
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PSMNR90-80CSFJPSMNR90-80CSF/SOT8005A/CCPAK12 Nexperia USA Inc. |
250 | - |
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数据手册 |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 505A (Tc) | 10V | 0.9mOhm @ 25A, 10V | 4V @ 1mA | 463 nC @ 10 V | ±20V | 32115 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
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PSMNR90-80ASFJPSMNR90-80ASF/SOT8000A/CCPAK12 Nexperia USA Inc. |
250 | - |
|
数据手册 |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 505A (Tc) | 10V | 0.85mOhm @ 25A, 10V | 4V @ 1mA | 463 nC @ 10 V | ±20V | 32115 pF @ 40 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212 |
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PSMN1R0-100CSFJPSMN1R0-100CSF/SOT8005A/CCPAK1 Nexperia USA Inc. |
250 | - |
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数据手册 |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 460A (Tc) | 10V | 1.04mOhm @ 25A, 10V | 4V @ 1mA | 539 nC @ 10 V | ±20V | 33624 pF @ 50 V | - | 1.55kW (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | CCPAK1212i |
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NSF080120D7A0JNSF080120D7A0/SOT8070/TO263-7L Nexperia USA Inc. |
797 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GAN039-650NTBJGAN CASCODE FETS Nexperia USA Inc. |
948 | - |
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数据手册 |
- | 12-BESOP (0.370", 9.40mm Width), Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 58.5A (Ta) | 10V | 39mOhm @ 32A, 10V | 4.6V @ 1mA | 26 nC @ 10 V | ±20V | 1980 pF @ 400 V | - | 250W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | CCPAK1212i |
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NSF080120L4A0QNSF080120L4A0/SOT8071/TO247-4L Nexperia USA Inc. |
446 | - |
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数据手册 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A (Tc) | 15V, 18V | 120mOhm @ 20A, 15V | 2.9V @ 2mA | 52 nC @ 15 V | +22V, -10V | 1335 pF @ 800 V | - | 183W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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NSF080120L3A0QSIC MOSFET / 80MOHM / 1200V / TO Nexperia USA Inc. |
420 | - |
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数据手册 |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NSF060120D7A0JNSF060120D7A0/SOT8070/TO263-7L Nexperia USA Inc. |
800 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
