电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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PSMN3R3-40MLHXMOSFET N-CH 40V 118A LFPAK33 Nexperia USA Inc. |
2,945 | - |
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数据手册 |
- | SOT-1210, 8-LFPAK33 (5-Lead) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 118A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.15V @ 1mA | 54 nC @ 10 V | ±20V | 3794 pF @ 20 V | - | 101W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK33 |
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PSMN2R0-40YLBXPSMN2R0-40YLB/SOT669/LFPAK Nexperia USA Inc. |
1,500 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 4.5V, 10V | 2.1mOhm @ 25A, 10V | 2.05V @ 1mA | 87 nC @ 10 V | ±20V | 6416 pF @ 20 V | Schottky Diode (Body) | 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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PSMN2R2-40YSBXPSMN2R2-40YSB/SOT669/LFPAK Nexperia USA Inc. |
1,485 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 3.6V @ 1mA | 69 nC @ 10 V | ±20V | 5173 pF @ 20 V | Schottky Diode (Body) | 166W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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PHB29N08T,118MOSFET N-CH 75V 27A D2PAK Nexperia USA Inc. |
3,734 | - |
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数据手册 |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | 5V @ 2mA | 19 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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BUK9Y4R8-60RAXBUK9Y4R8-60RA/SOT669/LFPAK Nexperia USA Inc. |
1,500 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PSMN012-100YSFXNEXTPOWER 80/100V MOSFETS Nexperia USA Inc. |
1,029 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 7V, 10V | 11.8mOhm @ 20A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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GANB4R8-040CBAZGANB4R8-040CBA/SOT8086/WLCSP22 Nexperia USA Inc. |
2,375 | - |
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数据手册 |
- | 22-UFBGA, WLCSP | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 20A (Ta) | 5V | 4.8mOhm @ 10A, 5V | 2.4V @ 1mA | 15.8 nC @ 5 V | 40V | 887 pF @ 20 V | - | 13W (Ta) | -40°C ~ 125°C (TJ) | - | - | Surface Mount | 22-WLCSP (2.1x2.1) |
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PSMN9R8-100YSFXNEXTPOWER 80/100V MOSFETS Nexperia USA Inc. |
2,833 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 7V, 10V | 10.2mOhm @ 20A, 10V | 4V @ 1mA | 50.4 nC @ 10 V | ±20V | 3384 pF @ 50 V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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PSMN1R7-40YLBXPSMN1R7-40YLB/SOT669/LFPAK Nexperia USA Inc. |
1,500 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 4.5V, 10V | 1.8mOhm @ 25A, 10V | 2.05V @ 1mA | 111 nC @ 10 V | ±20V | 8138 pF @ 20 V | Schottky Diode (Body) | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
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PSMN1R9-40YSBXPSMN1R9-40YSB/SOT669/LFPAK Nexperia USA Inc. |
1,495 | - |
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数据手册 |
- | SC-100, SOT-669 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.9mOhm @ 25A, 10V | 3.6V @ 1mA | 78 nC @ 10 V | ±20V | 6297 pF @ 20 V | Schottky Diode (Body) | 194W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | LFPAK56, Power-SO8 |
