电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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GT180P08D5MOSFET P-CH 80V 78A 178W 18M(MAX Goford Semiconductor |
5,000 | - |
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数据手册 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 78A (Tc) | 10V | 18mOhm @ 20A, 10V | 2.5V @ 250µA | 62.1 nC @ 10 V | 20V | 6998 pF @ 40 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT52N10D5N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Goford Semiconductor |
16,203 | - |
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数据手册 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 71A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2870 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT180P08MMOSFET, P-CH,-80V,-89A,RD(MAX)<1 Goford Semiconductor |
796 | - |
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数据手册 |
- | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GT080N10MN100V, 70A,RD<7.5M@10V,VTH1V~3V, Goford Semiconductor |
265 | - |
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数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2915 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G1K3N10GN100V, 5A,RD<130M@10V,VTH1V~2V, Goford Semiconductor |
215 | - |
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数据手册 |
TrenchFET® | TO-243AA | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 5A (Tc) | 4.5V, 10V | 130mOhm @ 5A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 644 pF @ 50 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-89 |
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G120P06MMOSFET P-CH 60V 120A 277W 8.5M(M Goford Semiconductor |
800 | - |
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数据手册 |
Trench | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 8.5mOhm @ 20A, 10V | 3V @ 250µA | 230 nC @ 10 V | 20V | 12215 pF @ 30 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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G900P15MMOSFET P-CH 150V 35A TO263 Goford Semiconductor |
444 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 80mOhm @ -5A, -10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 4056 pF @ 75 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC11N65KN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
2,212 | - |
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数据手册 |
SuperJunction | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT065P06MMOSFET P-CH 60V 103A 178W 9M(MAX Goford Semiconductor |
780 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 103A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5985 pF @ 30 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT100N12MN120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
708 | - |
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数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 10V | 10mOhm @ 35A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
