电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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GC11N65D5N650V, 11A,RD<360M@10V,VTH2.5V~4 Goford Semiconductor |
4,942 | - |
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数据手册 |
SuperJunction | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06AMN60V,170A,RD<2.5M@10V,VTH1.2V~2. Goford Semiconductor |
776 | - |
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数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 5119 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT011N03MEMOSFET N-CH ESD 30V A TO-263 Goford Semiconductor |
789 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 1.6mOhm @ 10A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±18V | 6140 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC11N65MN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
775 | - |
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数据手册 |
SuperJunction | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 768 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT025N06AD5N60V, 170A, RD<2.2M@10V,VTH1.2V~ Goford Semiconductor |
4,141 | - |
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数据手册 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5044 pF @ 30 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT025N06D5N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor |
7,056 | - |
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数据手册 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | 81 nC @ 10 V | ±20V | 5125 pF @ 30 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT045N10MN100V, 120A,RD<4.5M@10V,VTH2V~4V Goford Semiconductor |
609 | - |
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数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4198 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT045N10D5MOSFET N-CH 100V 120A DFN5*6-8L Goford Semiconductor |
4,517 | - |
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数据手册 |
- | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5mOhm @ 30A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 4217 pF @ 50 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G030N06MMOSFET N-CH 60V 223A TO-263 Goford Semiconductor |
770 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 223A (Tc) | 4.5V, 10V | 3mOhm @ 30A, 10V | 2.5V @ 250µA | 101 nC @ 4.5 V | ±20V | 12432 pF @ 30 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G080P06MP-60V,-195A,RD(MAX)<7.5M@-10V,VT Goford Semiconductor |
699 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | 186 nC @ 10 V | ±20V | 15870 pF @ 30 V | - | 294W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
