| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT105N10TN100V,RD(MAX)<10.5M@10V,RD(MAX)< Goford Semiconductor |
112 | - |
|
数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1625 pF @ 50 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
GT090N06MHMOSFET N-CH 60V 45A 52W 11M(MAX Goford Semiconductor |
800 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 10V | 11mOhm @ 15A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 1050 pF @ 30 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
G65P06TP-60V,RD(MAX)<18M@-10V,VTH-2.0V~ Goford Semiconductor |
134 | - |
|
数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6390 pF @ 30 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
G65P06D5P60V,RD(MAX)<18M@-10V,VTH-2V~-3V Goford Semiconductor |
4,667 | - |
|
数据手册 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6138 pF @ 25 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
G050P03KP-30V,-85A,RD(MAX)<4.5M@-10V,VTH Goford Semiconductor |
1,618 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 111 nC @ 10 V | ±20V | 7533 pF @ 15 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
GT750P10D5MOSFET P-CH 100V 24A 79W 60M(MAX Goford Semiconductor |
5,000 | - |
|
数据手册 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V, 4.5V | 60mOhm @ 10A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 20V | 1930 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
GT100P06KMOSFET P-CH 60V 60A 104W 8M(MAX Goford Semiconductor |
2,428 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 2.5V @ 250µA | 47 nC @ 10 V | ±20V | 3600 pF @ 30 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
GT750P10MMOSFET P-CH 100V 24A TO-263 Goford Semiconductor |
768 | - |
|
数据手册 |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 4.5V, 10V | 65mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1902 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
GT105N10KMOSFET, N-CH, 100V,60A,TO-252 Goford Semiconductor |
2,593 | - |
|
数据手册 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 10.5mOhm @ 35A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 1574 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
GT130N10MMOSFET N-CH 100V 60A TO-263 Goford Semiconductor |
748 | - |
|
数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1222 pF @ 50 V | - | 73.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |

