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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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GT060N04TMOSFET, N-CH, 40V,60A,TO-220 Goford Semiconductor |
126 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 62A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.3V @ 250µA | 25 nC @ 10 V | ±20V | 1280 pF @ 20 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G300P06D5P-60V,-40A,RD(MAX)<30M@-10V,VTH- Goford Semiconductor |
4,878 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 30mOhm @ 10A, 10V | 3V @ 250µA | 49 nC @ 10 V | ±20V | 2705 pF @ 30 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G60N04KN40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
4,867 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 2014 pF @ 20 V | - | 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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60N06N60V,RD(MAX)<17M@10V,RD(MAX)<21M Goford Semiconductor |
2,480 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 17mOhm @ 5A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 2315 pF @ 30 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G26P04KP-40V,RD(MAX)<18M@-10V,RD(MAX)<2 Goford Semiconductor |
2,245 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 18mOhm @ 10A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2849 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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18N10N100V,RD(MAX)<53M@10V,RD(MAX)<63 Goford Semiconductor |
1,931 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 53mOhm @ 10A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 2161 pF @ 50 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT110N06SN60V,RD(MAX)<15M@-4.5V,RD(MAX)<1 Goford Semiconductor |
3,583 | - |
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数据手册 |
SGT | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.4V @ 250µA | 24 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G2K8P15KP-150V,-12A,RD(MAX)<310M@-10V,VT Goford Semiconductor |
2,385 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 12A (Tc) | 10V | 310mOhm @ 1A, 10V | 3.5V @ 250µA | 11 nC @ 10 V | ±20V | 953 pF @ 75 V | - | 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT060N04KMOSFET, N-CH, 40V,54A,TO-252 Goford Semiconductor |
2,304 | - |
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数据手册 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 62A (Tc) | 4.5V, 10V | 5.5mOhm @ 30A, 10V | 2.3V @ 250µA | 25 nC @ 10 V | ±20V | 1280 pF @ 20 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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18N20JN200V, 18A,RD<0.16@10V,VTH1V~3V, Goford Semiconductor |
130 | - |
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数据手册 |
TrenchFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 160mOhm @ 9A, 10V | 3V @ 250µA | 17.7 nC @ 10 V | ±30V | 836 pF @ 25 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
