| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G50N03KN30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
4,483 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 1245 pF @ 15 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G15P04KP40V,RD(MAX)<39M@-10V,RD(MAX)<70 Goford Semiconductor |
4,460 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 15A (Tc) | 4.5V, 10V | 39mOhm @ 10A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 930 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G23N06KN60V,RD(MAX)<35M@10V,RD(MAX)<45M Goford Semiconductor |
3,415 | - |
|
数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A (Tc) | 4.5V, 10V | 35mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1343 pF @ 15 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G6K8P15KEMOSFET P-CH ESD 150V 12A TO-252 Goford Semiconductor |
2,308 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 12A (Tc) | 10V | 800mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 1550 pF @ 75 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT007N04TLN40V,150A,RD<1.5M@10V,VTH1.0V~2. Goford Semiconductor |
2,000 | - |
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数据手册 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.5mOhm @ 30A, 10V | 2.5V @ 250µA | 163 nC @ 10 V | ±20V | 7363 pF @ 20 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TOLL-8L |
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G085P02TSP-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V Goford Semiconductor |
4,480 | - |
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数据手册 |
- | 8-TSSOP (0.173", 4.40mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8.2A (Tc) | 1.8V, 4.5V | 8.5mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 29 nC @ 10 V | ±8V | 1255 pF @ 10 V | - | 1.05W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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G300P06SP-CH,-60V,-12A,RD(MAX)<30M@-10V, Goford Semiconductor |
3,391 | - |
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数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 30mOhm @ 8A, 10V | 3V @ 250µA | 49 nC @ 10 V | ±20V | 2719 pF @ 30 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G40P03KP-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Goford Semiconductor |
1,375 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 10mOhm @ 15A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2622 pF @ 15 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
G130N06SMOSFET, N-CH,60V,9A,RD(MAX)<12M@ Goford Semiconductor |
3,990 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 67 nC @ 10 V | ±20V | 3068 pF @ 30 V | - | 2.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G06N06SN60V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
6,020 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 4.5V, 10V | 22mOhm @ 6A, 10V | 2.4V @ 250µA | 46 nC @ 10 V | ±20V | 2477 pF @ 30 V | - | 2.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |

