| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | FET 特性 | 功耗(最大值) | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G36N03KN30V,36A,RD<8.5M@10V,VTH1.0V~2.2 Goford Semiconductor |
2,486 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 36A (Tc) | 4.5V, 10V | 8.5mOhm @ 20A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1040 pF @ 15 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G15N10CN100V,RD(MAX)<110M@10V,RD(MAX)<1 Goford Semiconductor |
2,081 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Tc) | 4.5V, 10V | 90mOhm @ 8A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | 1167 pF @ 50 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G080P06TMOSFET P-CH 60V 195A TO-220 Goford Semiconductor |
5,000 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 195A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | - | ±20V | - | - | 294W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G15N06KN-CH, 60V,15A,RD(MAX)<45M@10V,RD Goford Semiconductor |
11,877 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 4.5V, 10V | 45mOhm @ 8A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 762 pF @ 30 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G30N03D3N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
4,905 | - |
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数据手册 |
TrenchFET® | 8-PowerVDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 42A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 13 nC @ 10 V | ±20V | 1260 pF @ 15 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3.15x3.05) |
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G04P10HEP-100V,-4A,RD(MAX)<200M@-10V,VTH Goford Semiconductor |
3,858 | - |
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数据手册 |
TrenchFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4A (Tc) | 4.5V, 10V | 200mOhm @ 6A, 10V | 2.8V @ 250µA | 25 nC @ 10 V | ±20V | 1647 pF @ 50 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
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G2K2P10SEP-100V, 3.5A,RD<200M@-10V,VTH1V~ Goford Semiconductor |
3,755 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.5A (Tc) | 4.5V, 10V | 200mOhm @ 3A, 10V | 2.5V @ 250µA | 23 nC @ 10 V | ±20V | 1653 pF @ 50 V | - | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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4435P30V,RD(MAX)<20M@-10V,RD(MAX)<33 Goford Semiconductor |
3,726 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | ±20V | 1818 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G20N03KN30V,RD(MAX)<20M@10V,RD(MAX)<24M Goford Semiconductor |
2,843 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 923 pF @ 15 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G140P04KMOSFET P-CH 40V 45A 60W TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 12mOhm @ 20A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2261 pF @ 20 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |

