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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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GT700P08TP-80V, -25A,RD<72M@-10V,VTH-2V~- Goford Semiconductor |
101 | - |
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数据手册 |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 25A (Tc) | 10V | 72mOhm @ 2A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 1639 pF @ 40 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT700P08KP-80V,-20A,RD(MAX)<72M@-10V,VTH- Goford Semiconductor |
2,477 | - |
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数据手册 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 10V | 72mOhm @ 2A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 1615 pF @ 40 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT019N04D5N40V,120A,RD<2.8M@10V,VTH1.0V~2. Goford Semiconductor |
4,610 | - |
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数据手册 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 4.5V, 10V | 2.8mOhm @ 10A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 20 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT55N06D5N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Goford Semiconductor |
4,521 | - |
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数据手册 |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.4V @ 250µA | 31 nC @ 10 V | ±20V | 1085 pF @ 30 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G230P06SP-60V,-8A,RD(MAX)<23M@-10V,VTH-2 Goford Semiconductor |
3,920 | - |
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数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Tc) | 10V | 23mOhm @ 5A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 4784 pF @ 30 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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G60N10KN90V,60A,RD<25M@10V,VTH0.8V~2.5V Goford Semiconductor |
2,500 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | 146 nC @ 10 V | ±20V | 5944 pF @ 50 V | - | 105W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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GT750P08KMOSFET P-CH 80V 28A TO-252 Goford Semiconductor |
2,500 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | - | 28A (Tc) | 4.5V, 10V | 70mOhm @ 5A, 10V | 3V @ 250µA | 36 nC @ 10 V | ±20V | 1981 pF @ 40 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G70P04KMOSFET P-CH 40V 70A 88W 10M(MAX) Goford Semiconductor |
2,500 | - |
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数据手册 |
Trench | - | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V, 4.5V | 10mOhm @ 21A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 20V | 4714 pF @ 20 V | - | 88W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
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630AN200V,RD(MAX)<280M@10V,VTH1V~3V, Goford Semiconductor |
2,340 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 250mOhm @ 4.5A, 10V | 2V @ 250µA | 12 nC @ 10 V | ±20V | 510 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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G230P06D5MOSFET P-CH 60V 48A DFN5*6-8L Goford Semiconductor |
4,890 | - |
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数据手册 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 20mOhm @ -10A,- 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 5002 pF @ 30 V | - | 105W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
