场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
G09N06S2

G09N06S2

MOSFET N+N-CH 60V 9A DUAL SOP-8

Goford Semiconductor

4,000
G09N06S2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 9A (Tc) 18mOhm @ 9A, 10V 2.2V @ 250µA 47nC @ 10V 2180pF @ 30V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G130N06S2

G130N06S2

MOSFET 2N-CH 60V 9A 8SOP

Goford Semiconductor

4,000
G130N06S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 9A (Tc) 15mOhm @ 10A, 10V 2.5V @ 250µA 67nC @ 10V 3021pF @ 30V 2.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G4616

G4616

MOSFET N/P-CH 40V 8A 8SOP

Goford Semiconductor

568
G4616

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 40V 8A (Tc), 7A (Tc) 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V 2.5V @ 250µA 12nC @ 10V, 13nC @ 10V 415pF @ 20V, 520pF @ 20V 2W (Tc), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
6703

6703

MOSFET 20V 2.9A SOT23-6L

Goford Semiconductor

4,693
6703

数据手册

- SOT-23-6 Active MOSFET (Metal Oxide) - - 20V 2.9A (Ta), 3A (Ta) 59mOhm @ 2.5A, 2.5V, 110mOhm @ 3A, 4.5V 1.2V @ 250µA, 1V @ 250µA - 300pF @ 10V, 405pF @ 10V 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G05NP04S

G05NP04S

MOSFET 40V 4.5A 8SOP

Goford Semiconductor

6,502
G05NP04S

数据手册

- 8-SOIC (0.154", 3.90mm Width) Active MOSFET (Metal Oxide) - - 40V 4.5A (Tc), 10A (Tc) 41mOhm @ 1A, 10V, 37mOhm @ 10A, 10V 2.5V @ 250µA 8.9nC @ 10V, 13nC @ 10V 516pF @ 20V, 520pF @ 20V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G05NP10S

G05NP10S

MOSFET 100V 5A/6A 8SOP

Goford Semiconductor

4,243
G05NP10S

数据手册

- 8-SOIC (0.154", 3.90mm Width) Active MOSFET (Metal Oxide) - - 100V 5A (Tc), 6A (Tc) 170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V 3V @ 250µA 18nC @ 10V, 25nC @ 10V 797pF @ 25V, 760pF @ 25V 3W (Tc), 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G100C04D52

G100C04D52

MOSFET 40V 40A/24A 8DFN

Goford Semiconductor

6,606
G100C04D52

数据手册

- 8-PowerTDFN Active MOSFET (Metal Oxide) - - 40V 40A (Tc), 24A (Tc) 9mOhm @ 30A, 10V, 16mOhm @ 10A, 10V 2.5V @ 250µA 29nC @ 10V, 45nC @ 10V 2213pF @ 20V, 2451pF @ 20V 65W (Tc), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G180C06Y

G180C06Y

MOSFET N/P-CH 60V 50A TO252-4

Goford Semiconductor

9,358
G180C06Y

数据手册

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 60V 50A (Tc), 60A (Tc) 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V 2V @ 250µA, 4V @ 250µA 39nC @ 4.5V, 62nC @ 4.5V 2429pF @ 30V, 4471pF @ 30V 69W (Tc), 115W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4
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