场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
G33N03D3

G33N03D3

MOSFET 2N-CH 30V 30A 8DFN

Goford Semiconductor

80,000
G33N03D3

数据手册

TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 28A (Tc) 11mOhm @ 16A, 10V 2.5V @ 250µA 16nC @ 10V 837pF @ 15V 13W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
G20N06D52

G20N06D52

MOSFET 2N-CH 60V 20A 8DFN

Goford Semiconductor

5,000
G20N06D52

数据手册

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 20A (Tc) 30mOhm @ 20A, 10V 2.5V @ 250µA 25nC @ 10V 1326pF @ 30V 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G1NP02LLE

G1NP02LLE

MOSFET 20V 1.3A SOT23-6L

Goford Semiconductor

3,000
G1NP02LLE

数据手册

TrenchFET® SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V 1.3A (Tc), 1.1A (Tc) 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V 1V @ 250µA, 800mV @ 250µA 1nC @ 4.5V, 1.22nC @ 4.5V 146pF @ 10V, 177pF @ 10V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
GT060N04D52

GT060N04D52

MOSFET 2N-CH 40V 62A 8DFN

Goford Semiconductor

5,000
GT060N04D52

数据手册

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 62A (Tc) 6.5mOhm @ 30A, 10V 2.3V @ 250µA 44nC @ 10V 1276pF @ 20V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G300C03L6

G300C03L6

MOSFET N/P-CH 30V 5.6A SOT23-6L

Goford Semiconductor

3,010
G300C03L6

数据手册

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 5.6A, 4.2A (Tc) 27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V 1.3V @ 250µA 16nC @ 10 V, 8.5 nC @ 4.5 V 547pF @ 15 V, 693pF @ -15 V 1.4W (Ta), 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L Dual
GT090N06D52

GT090N06D52

MOSFET 2N-CH 60V 40A 8DFN

Goford Semiconductor

20,000
GT090N06D52

数据手册

SGT 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 40A (Tc) 14mOhm @ 14A, 10V 2.5V @ 250µA 24nC @ 10V 1011pF @ 30V 62W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G300N04S2

G300N04S2

MOSFET 2N-CH 40V 5.5A 8SOP

Goford Semiconductor

4,000
G300N04S2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 5.5A (Tc) 30mOhm @ 3A, 10V 2.5V @ 250µA 10nC @ 10V 522pF @ 20V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G2K3N10L6

G2K3N10L6

MOSFET 2N-CH 100V 3A SOT23-6L

Goford Semiconductor

1,877
G2K3N10L6

数据手册

TrenchFET® SOT-23-6 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 3A (Tc) 220mOhm @ 2A, 10V 2.2V @ 250µA 4.8nC @ 4.5V 536pF @ 50V 1.67W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
G085C03D32

G085C03D32

MOSFET N/P-CH 30V 28A 8DFN

Goford Semiconductor

4,990
G085C03D32

数据手册

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G160N04S2

G160N04S2

MOSFET 2N-CH 40V 9A 8SOP

Goford Semiconductor

3,980
G160N04S2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 9A (Tc) 15mOhm @ 4A, 10V 2V @ 250µA 24nC @ 10V 989pF @ 20V 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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