| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | FET 特性 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 输入电容 (Ciss)(最大值)@ Vds | 功率 - 最大值 | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G05N06S2MOSFET 2N-CH 60V 5A 8SOP Goford Semiconductor |
3,693 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 60V | 5A (Tc) | 35mOhm @ 5A, 4.5V | 2.5V @ 250µA | 22nC @ 10V | 1374pF @ 30V | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G05NP06S2MOSFET N/P-CH 60V 5A 8SOP Goford Semiconductor |
7,452 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 60V | 5A (Tc), 3.1A (Tc) | 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V | 2V @ 250µA, 2.2V @ 250µA | 22nC @ 10V, 37nC @ 10V | 1336pF @ 30V, 1454pF @ 30V | 2.5W (Tc), 1.9W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G1008BMOSFET 100V 8A 8SOP Goford Semiconductor |
3,240 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | - | - | 100V | 8A (Tc) | 130mOhm @ 2A, 10V | 3V @ 250µA | 15.5nC @ 10V | 690pF @ 25V | 3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G18NP06YMOSFET N/P-CH 60V 18A TO252-4 Goford Semiconductor |
2,390 |
|
数据手册 |
- | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | N and P-Channel, Common Drain | - | 60V | 18A (Tc) | 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V | 2.5V @ 250µA, 3.5V @ 250µA | 22nC @ 10V, 25nC @ 10V | 1350pF @ 30V, 2610pF @ 30V | 45W (Tc), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252-4 |
|
G1K2C10S2MOSFET 100V 3A/3.5A 8SOP Goford Semiconductor |
4,000 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | - | - | 100V | 3A (Tc), 3.5A (Tc) | 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V | 2.5V @ 250µA | 22nC @ 10V, 23nC @ 10V | 668pF @ 50V, 1732pF @ 50V | 2W (Tc), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G170P03S2MOSFET 2P-CH 30V 9A 8SOP Goford Semiconductor |
3,359 |
|
数据手册 |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | - | 2 P-Channel (Dual) | - | 30V | 9A (Tc) | 25mOhm @ 5A, 4.5V | 2.5V @ 250µA | 18nC @ 10V | 1786pF @ 4.5V | 1.4W (Tc) | -55°C ~ 150°C (Tc) | - | - | Surface Mount | 8-SOP |
|
G20N06D52MOSFET 2N-CH 60V 20A 8DFN Goford Semiconductor |
6,348 |
|
数据手册 |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 20A (Tc) | 30mOhm @ 20A, 10V | 2.5V @ 250µA | 25nC @ 10V | 1326pF @ 30V | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
G2K2P10S2EMOSFET 2P-CH 100V 3.5A 8SOP Goford Semiconductor |
3,518 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | - | 100V | 3.5A (Tc) | 200mOhm @ 3A, 10V | 2.5V @ 250µA | 23nC @ 10V | 1623pF @ 50V | 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
G33N03D3MOSFET 2N-CH 30V 28A 8DFN Goford Semiconductor |
7,138 |
|
数据手册 |
TrenchFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 28A (Tc) | 11mOhm @ 16A, 10V | 2.5V @ 250µA | 15nC @ 10V | 837pF @ 15V | 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (3x3) |
|
G120P03S2MOSFET 30V 16A 8SOP Goford Semiconductor |
4,000 |
|
数据手册 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | - | - | 30V | 16A (Tc) | 14mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2835pF @ 15V | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |