场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
G05N06S2

G05N06S2

MOSFET 2N-CH 60V 5A 8SOP

Goford Semiconductor

3,693
G05N06S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 5A (Tc) 35mOhm @ 5A, 4.5V 2.5V @ 250µA 22nC @ 10V 1374pF @ 30V 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G05NP06S2

G05NP06S2

MOSFET N/P-CH 60V 5A 8SOP

Goford Semiconductor

7,452
G05NP06S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel - 60V 5A (Tc), 3.1A (Tc) 36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V 2V @ 250µA, 2.2V @ 250µA 22nC @ 10V, 37nC @ 10V 1336pF @ 30V, 1454pF @ 30V 2.5W (Tc), 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G1008B

G1008B

MOSFET 100V 8A 8SOP

Goford Semiconductor

3,240
G1008B

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) - - 100V 8A (Tc) 130mOhm @ 2A, 10V 3V @ 250µA 15.5nC @ 10V 690pF @ 25V 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G18NP06Y

G18NP06Y

MOSFET N/P-CH 60V 18A TO252-4

Goford Semiconductor

2,390
G18NP06Y

数据手册

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 60V 18A (Tc) 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V 2.5V @ 250µA, 3.5V @ 250µA 22nC @ 10V, 25nC @ 10V 1350pF @ 30V, 2610pF @ 30V 45W (Tc), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4
G1K2C10S2

G1K2C10S2

MOSFET 100V 3A/3.5A 8SOP

Goford Semiconductor

4,000
G1K2C10S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 100V 3A (Tc), 3.5A (Tc) 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V 2.5V @ 250µA 22nC @ 10V, 23nC @ 10V 668pF @ 50V, 1732pF @ 50V 2W (Tc), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G170P03S2

G170P03S2

MOSFET 2P-CH 30V 9A 8SOP

Goford Semiconductor

3,359
G170P03S2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active - 2 P-Channel (Dual) - 30V 9A (Tc) 25mOhm @ 5A, 4.5V 2.5V @ 250µA 18nC @ 10V 1786pF @ 4.5V 1.4W (Tc) -55°C ~ 150°C (Tc) - - Surface Mount 8-SOP
G20N06D52

G20N06D52

MOSFET 2N-CH 60V 20A 8DFN

Goford Semiconductor

6,348
G20N06D52

数据手册

TrenchFET® 8-PowerTDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A (Tc) 30mOhm @ 20A, 10V 2.5V @ 250µA 25nC @ 10V 1326pF @ 30V 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
G2K2P10S2E

G2K2P10S2E

MOSFET 2P-CH 100V 3.5A 8SOP

Goford Semiconductor

3,518
G2K2P10S2E

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 100V 3.5A (Tc) 200mOhm @ 3A, 10V 2.5V @ 250µA 23nC @ 10V 1623pF @ 50V 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G33N03D3

G33N03D3

MOSFET 2N-CH 30V 28A 8DFN

Goford Semiconductor

7,138
G33N03D3

数据手册

TrenchFET® 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 28A (Tc) 11mOhm @ 16A, 10V 2.5V @ 250µA 15nC @ 10V 837pF @ 15V 13W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
G120P03S2

G120P03S2

MOSFET 30V 16A 8SOP

Goford Semiconductor

4,000
G120P03S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 16A (Tc) 14mOhm @ 10A, 10V 2.5V @ 250µA 35nC @ 10V 2835pF @ 15V 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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