场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































全部应用
全部重置
结果
图片 制造商型号 库存情况 价格 数量 数据手册 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
6706A

6706A

MOSFET 30V 6.5A 8SOP

Goford Semiconductor

4,000
6706A

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 6.5A (Tc), 5A (Tc) 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V 2V @ 250µA, 2.5V @ 250µA 5.2nC @ 10V, 9.2nC @ 10V 255pF @ 15V, 520pF @ 15V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G800N06S2

G800N06S2

MOSFET 2N-CH 60V 3A 8SOP

Goford Semiconductor

3,627
G800N06S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 3A (Tc) 80mOhm @ 3A, 10V 1.2V @ 250µA 6nC @ 10V 458pF @ 30V 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G4614

G4614

MOSFET N/P-CH 40V 6A 8SOP

Goford Semiconductor

3,370
G4614

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel - 40V 6A (Tc), 7A (Tc) 35mOhm @ 3A, 10V, 35mOhm @ 2A, 10V 2.5V @ 250µA, 3V @ 250µA 15nC @ 10V, 25nC @ 10V 523pF @ 20V, 1217pF @ 20V 1.9W (Tc), 2.66W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G1K8P06S2

G1K8P06S2

MOSFET 2P-CH 60V 3.2A 8SOP

Goford Semiconductor

3,098
G1K8P06S2

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 60V 3.2A (Tc) 170mOhm @ 1A, 10V 2.5V @ 250µA 11.3nC @ 10V 594pF @ 30V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G170P02D32

G170P02D32

MOSFET 2P-CH 20V 20A 8DFN

Goford Semiconductor

4,898
G170P02D32

数据手册

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 20A (Tc) 21mOhm @ 6A, 4.5V 1V @ 250µA 30nC @ 10V 2193pF @ 10V 15W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05) Dual
G220P03D32

G220P03D32

MOSFET 2P-CH 30V 12A 8DFN

Goford Semiconductor

4,703
G220P03D32

数据手册

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 12A (Tc) 22mOhm @ 3A, 10V 2V @ 250µA 25nC @ 10V 1305pF @ 15V 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05) Dual
G350N06D32

G350N06D32

MOSFET 2N-CH 60V 10A 8DFN

Goford Semiconductor

3,067
G350N06D32

数据手册

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 10A (Tc) 35mOhm @ 5A, 10V 2.5V @ 250µA 25nC @ 10V 1330pF @ 30V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G220P03S2

G220P03S2

MOSFET 2P-CH 30V 9A 8SOP

Goford Semiconductor

3,935
G220P03S2

数据手册

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 9A (Tc) 22mOhm @ 3A, 10V 2V @ 250µA 24.5nC @ 10V 1277pF @ 15V 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G4953S

G4953S

MOSFET 2P-CH 30V 5A 8SOP

Goford Semiconductor

1,694
G4953S

数据手册

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 5A (Tc) 45mOhm @ 5A, 10V 3V @ 250µA 11nC @ 10V 520pF @ 15V 1.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G120N03D32

G120N03D32

MOSFET 2N-CH 30V 28A 8DFN

Goford Semiconductor

4,995
G120N03D32

数据手册

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 28A (Tc) 12mOhm @ 10A, 10V 2.2V @ 250µA 18nC @ 10V 1089pF @ 15V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
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