| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GP2D006A065ADIODE SIL CARB 650V 6A TO220-2 SemiQ |
4,038 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D006A065CDIODE SIL CARB 650V 6A TO252-2L SemiQ |
9,030 |
|
数据手册 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 316pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
GP2D010A120ADIODE SIL CARB 1.2KV 10A TO220-2 SemiQ |
7,035 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 SemiQ |
6,089 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D010A120CDIODE SIL CARB 1.2KV 10A TO252L SemiQ |
7,338 |
|
数据手册 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 635pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 (DPAK) | -55°C ~ 175°C |
|
GP2D010A170BDIODE SIL CARB 1.7KV 10A TO247-2 SemiQ |
8,424 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 10A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 812pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D020A120BDIODE SIL CARB 1.2KV 20A TO247-2 SemiQ |
2,108 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1270pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D020A170BDIODE SIL CARB 1.7KV 20A TO247-2 SemiQ |
7,267 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 20A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1700 V | 1624pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D030A120BDIODE SIL CARB 1.2KV 30A TO247-2 SemiQ |
4,014 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1905pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D010A065ADIODE SIL CARB 650V 10A TO220-2 SemiQ |
6,794 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | - | 100 µA @ 650 V | 527pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |