| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D015A120BDIODE SIL CARB 1.2KV 15A TO247-2 SemiQ |
7,032 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.6 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 962pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D040A065UDIODE SIL CARB 650V 40A TO247-3 SemiQ |
3,520 |
|
数据手册 |
Amp+™ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
GP3D020A120BDIODE SIL CARB 1.2KV 20A TO247-2 SemiQ |
4,590 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 1179pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D050A065BDIODE SIL CARB 650V 135A TO247-2 SemiQ |
6,200 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 135A | 1.6 V @ 50 A | No Recovery Time > 500mA (Io) | - | 125 µA @ 650 V | 1946pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D030A120BDIODE SIL CARB 1.2KV 30A TO247-2 SemiQ |
9,900 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 1762pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP2D050A120BDIODE SIL CARB 1.2KV 50A TO247-2 SemiQ |
8,045 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 3174pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GP2D003A065ADIODE SIL CARB 650V 3A TO220-2 SemiQ |
7,306 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.65 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 158pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GP2D005A120ADIODE SIL CARB 1.2KV 5A TO220-2 SemiQ |
9,665 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP2D005A120CDIODE SIL CARB 1.2KV 5A TO252-2L SemiQ |
8,410 |
|
数据手册 |
Amp+™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 317pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
GP2D005A170BDIODE SIL CARB 1.7KV 5A TO247-2 SemiQ |
3,053 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 1700 V | 5A | 1.75 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 406pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |