| 图片 | 制造商型号 | 库存情况 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电流 - 平均整流(Io) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D008A065ADIODE SIL CARB 650V 8A TO220-2 SemiQ |
7,088 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 336pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065ADIODE SIL CARB 650V 10A TO220-2 SemiQ |
8,334 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A065BDIODE SIL CARB 650V 10A TO247-2 SemiQ |
7,555 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 419pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D012A065ADIODE SIL CARB 650V 12A TO220-2 SemiQ |
6,993 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D008A065DDIODE SIC 650V 8A TO263-2L SemiQ |
3,278 |
|
数据手册 |
- | - | Tape & Reel (TR) | Active | - | 650 V | 8A | - | - | - | - | - | - | - | - | - | - |
|
GP3D010A065CDIODE SILICON CARBIDE SemiQ |
8,544 |
|
数据手册 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GP3D010A065DDIODE SIC 650V 8A TO263-2L SemiQ |
5,502 |
|
数据手册 |
- | - | Tape & Reel (TR) | Active | - | 650 V | 10A | - | - | - | - | - | - | - | - | - | - |
|
GP3D012A065BDIODE SIL CARB 650V 12A TO247-2 SemiQ |
1,166 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GP3D020A065ADIODE SIL CARB 650V 20A TO220-2 SemiQ |
8,484 |
|
数据手册 |
Amp+™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | - | 75 µA @ 650 V | 1247pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GP3D010A120BDIODE SIL CARB 1.2KV 10A TO247-2 SemiQ |
4,098 |
|
数据手册 |
Amp+™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.65 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 608pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |