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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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LSIC1MO120T0120-TU1200V/120MOHM SIC MOSFET TO-263- IXYS |
3,188 | - |
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数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 27A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
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IXTA02N450HVMOSFET N-CH 4500V 200MA TO263 IXYS |
6,510 | - |
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数据手册 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 256 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA |
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IXFH12N90MOSFET N-CH 900V 12A TO247AD IXYS |
4,983 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXTH12N100MOSFET N-CH 1000V 12A TO247 IXYS |
3,793 | - |
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数据手册 |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXFH50N60XMOSFET N-CH 600V 50A TO247 IXYS |
8,992 | - |
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数据手册 |
HiPerFET™, Ultra X | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXFT80N15QMOSFET N-CH 150V 80A TO268 IXYS |
6,764 | - |
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数据手册 |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 80A (Tc) | 10V | 22.5mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXTK62N25MOSFET N-CH 250V 62A TO264 IXYS |
5,945 | - |
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数据手册 |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 62A (Tc) | 10V | 35mOhm @ 31A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
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IXTT12N140MOSFET N-CH 1400V 12A TO268 IXYS |
7,631 | - |
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数据手册 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1400 V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106 nC @ 10 V | ±20V | 3720 pF @ 25 V | - | 890W (Tc) | - | - | - | Surface Mount | TO-268AA |
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IXFT50N60XMOSFET N-CH 600V 50A TO268 IXYS |
5,629 | - |
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数据手册 |
HiPerFET™, Ultra X | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268 |
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IXFH60N60XMOSFET N-CH 600V 60A TO247 IXYS |
9,452 | - |
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数据手册 |
HiPerFET™, Ultra X | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 55mOhm @ 30A, 10V | 4.5V @ 8mA | 143 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
