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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFT24N50MOSFET N-CH 500V 24A TO268 IXYS |
7,771 | - |
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数据手册 |
HiPerFET™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
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IXFT78N60X3HVMOSFET ULTRA 600V 78A TO268HV IXYS |
9,900 | - |
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数据手册 |
HiPerFET™, Ultra X3 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A (Tc) | 10V | 38mOhm @ 39A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
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IXTT440N04T4HVMOSFET N-CH 40V 440A TO268 IXYS |
9,236 | - |
|
数据手册 |
Trench | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 440A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 4V @ 250µA | 480 nC @ 10 V | ±15V | 26000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268HV (IXTT) |
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IXFH80N08MOSFET N-CH 80V 80A TO247AD IXYS |
9,859 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 10V | 9mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH60N20MOSFET N-CH 200V 60A TO247AD IXYS |
6,356 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 33mOhm @ 30A, 10V | 4V @ 4mA | 155 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH80N10MOSFET N-CH 100V 80A TO247AD IXYS |
2,336 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 12.5mOhm @ 40A, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXFH22N55MOSFET N-CH 550V 22A TO247AD IXYS |
2,834 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXTC75N10MOSFET N-CH 100V 72A ISOPLUS220 IXYS |
5,161 | - |
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数据手册 |
MegaMOS™ | ISOPLUS220™ | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 72A (Tc) | 10V | 20mOhm @ 37.5A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS220™ |
|
IXTK128N15MOSFET N-CH 150V 128A TO264 IXYS |
8,246 | - |
|
数据手册 |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 128A (Tc) | 10V | 15mOhm @ 500mA, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
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IXTK80N25MOSFET N-CH 250V 80A TO264 IXYS |
8,384 | - |
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数据手册 |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 80A (Tc) | 10V | 33mOhm @ 500mA, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
