电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFA4N100Q-TRLMOSFET N-CH 1000V 4A TO263 IXYS |
2,879 | - |
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数据手册 |
HiPerFET™, Q Class | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263AA (IXFA) |
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IXTH32N65XMOSFET N-CH 650V 32A TO247 IXYS |
7,496 | - |
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数据手册 |
Ultra X | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 135mOhm @ 16A, 10V | 5.5V @ 250µA | 54 nC @ 10 V | ±30V | 2205 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
IXFH15N60MOSFET N-CH 600V 15A TO-247AD IXYS |
5,313 | - |
|
数据手册 |
HiPerFET™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
LSIC1MO120T0160-TU1200V/160MOHM SIC MOSFET TO-263- IXYS |
9,902 | - |
|
数据手册 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 |
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IXFR26N50QMOSFET N-CH 500V 24A ISOPLUS247 IXYS |
5,577 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 200mOhm @ 13A, 10V | 4.5V @ 4mA | 95 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFR26N50MOSFET N-CH 500V 26A ISOPLUS247 IXYS |
6,027 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXFX74N50P2MOSFET N-CH 500V 74A PLUS247-3 IXYS |
6,929 | - |
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数据手册 |
HiPerFET™, PolarHV™ | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 74A (Tc) | 10V | 77mOhm @ 500mA, 10V | 5V @ 4mA | 165 nC @ 10 V | ±30V | 9900 pF @ 25 V | - | 1400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PLUS247™-3 |
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IXFH21N50MOSFET N-CH 500V 21A TO247AD IXYS |
4,214 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 250mOhm @ 10.5A, 10V | 4V @ 4mA | 160 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXT-1-1N100S1-TRMOSFET N-CH 1000V 1.5A 8-SOIC IXYS |
2,615 | - |
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数据手册 |
- | - | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.5A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXTH50N30MOSFET N-CH 300V 50A TO247 IXYS |
6,437 | - |
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数据手册 |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 65mOhm @ 25A, 10V | 4V @ 250µA | 165 nC @ 10 V | ±30V | 4400 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
