电子元器件供应链解决方案商
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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFQ60N60XMOSFET N-CH 600V 60A TO3P IXYS |
6,941 | - |
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数据手册 |
HiPerFET™, Ultra X | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 55mOhm @ 30A, 10V | 4.5V @ 8mA | 143 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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IXFH6N100MOSFET N-CH 1000V 6A TO247AD IXYS |
2,308 | - |
|
数据手册 |
HiPerFET™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6A (Tc) | 10V | 2Ohm @ 500mA, 10V | 4.5V @ 2.5mA | 130 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
IXFK16N90QMOSFET N-CH 900V 16A TO264AA IXYS |
5,942 | - |
|
数据手册 |
HiPerFET™, Q Class | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 16A (Tc) | 10V | 650mOhm @ 8A, 10V | 5V @ 4mA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
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IXFR15N80QMOSFET N-CH 800V 13A ISOPLUS247 IXYS |
5,502 | - |
|
数据手册 |
HiPerFET™, Q Class | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 600mOhm @ 7.5A, 10V | 4.5V @ 4mA | 90 nC @ 10 V | ±20V | 4300 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS247™ |
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IXTH67N10MOSFET N-CH 100V 67A TO247 IXYS |
6,643 | - |
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数据手册 |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 25mOhm @ 33.5A, 10V | 4V @ 4mA | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXFH13N100MOSFET N-CH 1000V 12.5A TO247AD IXYS |
7,804 | - |
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数据手册 |
HiPerFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12.5A (Tc) | 10V | 900mOhm @ 500mA, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
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IXTH14N100MOSFET N-CH 1000V 14A TO247 IXYS |
2,663 | - |
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数据手册 |
MegaMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 820mOhm @ 500mA, 10V | 4.5V @ 250µA | 195 nC @ 10 V | ±20V | 5650 pF @ 25 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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MKE11R600DCGFCMOSFET N-CH 600V 15A I4PAC IXYS |
2,162 | - |
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数据手册 |
CoolMOS™ | ISOPLUSi5-PAK™ | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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IXTH12N120MOSFET N-CH 1200V 12A TO247 IXYS |
5,035 | - |
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数据手册 |
- | TO-247-3 | Box | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.4Ohm @ 6A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±30V | 3400 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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IXTK90N15MOSFET N-CH 150V 90A TO264 IXYS |
6,160 | - |
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数据手册 |
MegaMOS™ | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Tc) | 10V | 16mOhm @ 45A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
