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场效应晶体管（FETs）、MOSFETs
| 制造商 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
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全部应用
全部重置
结果
| 图片 | 制造商型号 | 库存情况 | 价格 | 数量 | 数据手册 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIE868DF-T1-GE3MOSFET N-CH 40V 60A 10POLARPAK Vishay Siliconix |
7,321 | - |
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数据手册 |
TrenchFET® | 10-PolarPAK® (L) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2.2V @ 250µA | 145 nC @ 10 V | ±20V | 6100 pF @ 20 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (L) |
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SIR408DP-T1-GE3MOSFET N-CH 25V 50A PPAK SO-8 Vishay Siliconix |
7,422 | - |
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数据手册 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6.3mOhm @ 20A, 10V | 2.5V @ 250µA | 33 nC @ 10 V | ±20V | 1230 pF @ 15 V | - | 4.8W (Ta), 44.6W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
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SIS414DN-T1-GE3MOSFET N-CH 30V 20A PPAK1212-8 Vishay Siliconix |
5,147 | - |
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数据手册 |
TrenchFET® | PowerPAK® 1212-8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 2.5V, 4.5V | 16mOhm @ 10A, 4.5V | 1.5V @ 250µA | 33 nC @ 10 V | ±12V | 795 pF @ 15 V | - | 3.4W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 |
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SUD45P03-09-GE3MOSFET P-CH 30V 45A TO252 Vishay Siliconix |
9,467 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.5V @ 250µA | 90 nC @ 10 V | ±20V | 2700 pF @ 15 V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
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SUD50N02-04P-E3MOSFET N-CH 20V 50A TO252 Vishay Siliconix |
5,897 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 50A (Tc) | 4.5V, 10V | 4.3mOhm @ 20A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±20V | 5000 pF @ 10 V | - | 8.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SUD50P04-13L-GE3MOSFET P-CH 40V 60A TO252 Vishay Siliconix |
7,086 | - |
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数据手册 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 3V @ 250µA | 95 nC @ 10 V | ±20V | 3120 pF @ 25 V | - | 3W (Ta), 93.7W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA |
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SUM85N03-06P-E3MOSFET N-CH 30V 85A TO263 Vishay Siliconix |
7,737 | - |
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数据手册 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 85A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 65 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 3.75W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
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SUP50N03-5M1P-GE3MOSFET N-CH 30V 50A TO220AB Vishay Siliconix |
7,429 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 22A, 10V | 2.5V @ 250µA | 66 nC @ 10 V | ±20V | 2780 pF @ 15 V | - | 2.7W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SUP90N04-3M3P-GE3MOSFET N-CH 40V 90A TO220AB Vishay Siliconix |
3,935 | - |
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数据手册 |
TrenchFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 22A, 10V | 2.5V @ 250µA | 131 nC @ 10 V | ±20V | 5286 pF @ 20 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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SI1072X-T1-GE3MOSFET N-CH 30V SC89-6 Vishay Siliconix |
6,136 | - |
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数据手册 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 4.5V, 10V | 93mOhm @ 1.3A, 10V | 3V @ 250µA | 8.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-89 (SOT-563F) |
